China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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high power semiconductor discrete devices

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...Power Supplies High Dense Super Junction Design with Large EMI Margin and High Density Product Description: As an N-type MOSFET, this device offers ... 2025-07-11 00:37:58
... performance with low power loss. This means that the device consumes less power, and is highly efficient in delivering power across various ... 2025-04-01 14:35:06
High Voltage Levels Super Junction MOSFET 650V TO-220F For Power Supply Product Description: With its much lower Ron*A performance, the Super Junction ... 2025-07-11 00:37:58
...means that it consumes less energy compared to other electronic components, making it an excellent choice for energy-efficient devices and ... 2025-07-11 00:37:58
...Power Transistor Anti EMI For SMPS Product Description: One of the standout features of this Super Junction MOSFET is its 100% avalanche testing. ... 2025-07-11 00:37:58
...High Power Semiconductor is particularly useful in charging pile applications for electric vehicles, where high voltage power IGBT is required for ... 2025-07-11 00:37:58
...high-quality power discrete device for your telecom or server power supply needs, the Lingxun Super Junction MOSFET is an excellent choice. This N... 2025-07-11 00:37:58
... range of 20KHz-60KHz, this device is capable of handling a wide range of applications, from consumer electronics to power generation and ... 2025-07-11 00:37:58
...power station • Energy storage • Solar string inverter • Uninterruptible power supplies Q1.Who are we? A:We are based in Guangdong, China,factory ... 2025-07-11 00:37:58
...power station • Energy storage PFC applications • Uninterruptible power supplies • Solar inverters Q1.Who are we? A:We are based in Guangdong, ... 2025-07-11 00:37:58
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