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high power semiconductor discrete devices
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...Power Mosfet N Channel For Power Management Id:80A Vdss:30V Rdson-typ(@Vgs=10V):3.82mΩ Features: Advanced Trench Technology Excellent RDS(ON) and ...
2025-07-11 00:37:58
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... 4.0 20 - - - 150 150 Product Description: The MBR2060FCT Schottky Barrier Diodes come in a TO-220F package, which is a popular package type for ...
2025-02-08 13:30:15
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Power Discrete Devices N Type Super Junction MOSFET with Large EMI Margin *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body ...
2025-07-11 00:37:58
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7A 650V 525mΩ TO-220F Cool MOS For Uninterruptible Power Supply N-channel Super Junction MOSFET Part No.:LC65R600F Package:TO-220F MAIN CHARACTERISTIC...
2025-07-11 00:37:58
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Faster Switching Speed Power IGBT Device For Grid infrastructure *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100...
2025-07-11 00:37:58
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...t make it stand out in the market. Firstly, it has a high breakdown voltage, making it suitable for PWM in motor control and industrial automation ...
2025-02-08 13:29:40
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...High Voltage MOSFET TO-220AB AC To DC Power Supply Part Number Package Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) Qg (nC) Ciss (pF...
2025-02-08 13:29:45
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...Powered Devices Low Voltage MOSFET 60V Product Description: One of the key benefits of this MOSFET is its low Rds(ON) resistance. This means that ...
2025-07-11 00:37:58
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...ideal for use in battery-powered devices that require low power consumption. This MOSFET also offers high switching speeds and low gate charge, ...
2025-07-11 00:37:58
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High Breakdown Voltage SiC MOSFET For Smart Home Device Power Supplies *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body ...
2025-07-11 00:37:58
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