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high power n channel
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...channel Super Junction MOSFET Part No.:LC60R280F Package:TO-220F MAIN CHARACTERISTICS ID:15A VDSS:600V RDSON-typ VGS=10V:274mΩ FEATURES • Low gate ...
2025-07-11 00:37:58
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...High Power MOSFET TO-220F Package Fast Switching Applications: The High Power MOSFET is an ideal component for high-power applications, thanks to ...
2025-07-11 00:37:58
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...High Power Semiconductor is particularly useful in charging pile applications for electric vehicles, where high voltage power IGBT is required for ...
2025-07-11 00:37:58
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... range of 20KHz-60KHz, this device is capable of handling a wide range of applications, from consumer electronics to power generation and ...
2025-07-11 00:37:58
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...Power Efficiency Silicon Low Voltage MOSFET For TO-220F Package LG120N085AP Part Number Package Die Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS...
2025-04-01 14:35:08
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... voltage • Short circuit withstands time 10μs • High ruggedness performance • Easy parallel switching capability APPLICATIONS • Inverter TO-247 • ...
2025-07-11 00:37:58
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...Extremely low switching loss • Excellent stability and uniformity • Fast Recovery Time APPLICATIONS • Switch Mode Power Supply(SMPS) • Uninterrupti...
2025-07-11 00:37:58
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...Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) RDS(ON) 4.5V(mΩ) Qg (nC) Ciss (pF) Min. Min. Min. Max. TYP MAX TYP MAX Typ Typ ...
2025-02-08 13:28:59
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... • Fast Recovery Body-Diode • Lower Gate Resistance • 100% Avalanche Tested APPLICATIONS • Soft Switching Topologies • Telecom and Sever Power ...
2025-02-12 07:30:10
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...Power Management Product Description: Our Schottky Barrier Diodes come in a variety of packages such as TO-251, TO-252, TO-263, TO-220, and TO-247, ...
2025-07-11 00:37:58
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