China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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high power mosfet transistors

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... • Low VCE(sat) • Reliable and Rugged APPLICATIONS • UPS • Motor drives • Boost • Portable power station Q1.Who are we? A:We are based in Guangdong... 2025-07-11 00:37:58
650V IGBT Power Semiconductor with High Input Impedance in TO-247 Package Product Description: The Inverter IGBT has a Collector-Emitter Voltage ... 2025-07-11 00:37:58
... TO-252 1 10 200 5 0.85 0.92 0.6 5 2 - - 130 150 Product Description: Our Schottky Barrier Diodes are also cost-effective, providing a high-quality ... 2025-07-11 00:37:58
...Power IGBT For Boost MAIN CHARACTERISTICS Ic @TC=100℃ 60A VCE 650V VCE(sat)-typ 1.7V FEATURES • Positive temperature coefficient • Fast Switching • ... 2025-07-11 00:37:58
...power station • Energy storage PFC applications • Uninterruptible power supplies • Solar inverters Q1. Who are we? A: We are based in Guangdong, ... 2025-07-11 00:37:58
Low Power Loss Ultra Low VF Schottky Diode For High Speed Circuit *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: ... 2025-07-11 00:37:58
High Efficiency Low VF Schottky Diodes For Power Supply Units *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;... 2025-07-11 00:37:58
SBT30L150DC 30A150V Schottky Barrier Diode TO-263 High Efficiency For Power Supply NO Part Number Package Die Io (A) VBR @IR VF(25℃) @IF IR(25℃) @VBR ... 2025-07-11 00:37:58
20A150V MBR20150CS Schottky Barrier Diodes High Frequency Switch Power Supply with Fast Switching Speed Part Number Package Die Io (A) VBR VF(25℃) IR... 2025-07-11 00:37:58
16A45V MBR1645CT High Frequency Switch Power Supply Schottky Barrier Diodes Part Number Package Die Io (A) VBR VF(25℃) IR(25℃) VF(125℃) ... 2025-02-08 13:30:04
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