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high power mosfet transistors
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...High Frequency N Channel Enhancement Mode Power IGBT For PFC MAIN CHARACTERISTICS Ic(A):40A Vces(V):650V VGES(V):±20 TRR(nS):33nS FEATURES • Trench ...
2025-07-11 00:37:58
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... • Fast Switching • Low VCE(sat) • Reliable and Rugged Q1.Who are we? A:We are based in Guangdong, China,factory start from 2012,is a national high...
2025-07-11 00:37:58
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...Transistor Stable Charging Pile Ultra Inverter IGBT Features • Positive temperature coefficient • Fast Switching • Low VCE(sat) • Reliable and ...
2025-07-11 00:37:58
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...Positive VCE (sat) temperature coefficient • High efficiency for motor control • Excellent current sharing in parallel operation • RoHS compliant ...
2025-07-11 00:37:58
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...Power Applications This particular product is a Type N semiconductor with low junction capacitance, making it ideal for high voltage applications. ...
2025-07-11 00:37:58
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...Mosfet For Brushless Motors And Lithium Battery Management Features • Positive temperature coefficient • Fast Switching • Low VCE(sat) • Reliable ...
2025-07-11 00:37:58
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2025-07-11 00:37:58
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*, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-smoothing: antialiased;...
2025-07-11 00:37:58
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Large EMI Margin Excellent Gate Charge 100% Avalanche Tested Much Lower Ron*A Performance for On-state Efficiency *, *::before, *::after {box-sizing: ...
2025-07-11 00:37:58
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Faster Switching Speed Power IGBT Device For Grid infrastructure *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100...
2025-07-11 00:37:58
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