China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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high power mosfet to 247

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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high power mosfet to 247

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Product Description: The High Power IGBT is a top-performing semiconductor device that is designed for a wide range of industrial and commercial ... 2025-07-11 00:37:58
Product Description: N Type High Temperature Resistance Low Leakage Low Junction Capacitance Power Semiconductor Designed with a low junction ... 2025-07-11 00:37:58
...High Voltage MOSFET With Low Gate Charge TO-220F Part Number Package Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) Qg (nC) Ciss (pF) ... 2025-02-08 13:29:29
Low Ciss High Voltage MOSFET For Power Switch Circuit Of Charger And Adapter *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body ... 2025-07-11 00:37:58
High Input Impedance High Power IGBT For Consumer Electronics Product Description: This IGBT device comes in a TO-247 package type that is easy to ... 2025-07-11 00:37:58
...) • Ultra Low On-Resistance • Reliable and Rugged Applications: • SMPS Q1.Who are we? A:We are based in Guangdong, China,factory start from 2012,is ... 2025-07-11 00:37:58
...Power Mosfets Electronic Devices Improved System Efficiency Product Description: Our Low Voltage MOSFET boasts of a low on-resistance, which is ... 2025-07-11 00:37:58
High Temperature Tolerances Silicon Carbide MOSFET For Power Supply Units Product Description: The Lingxun SiC MOSFET is perfect for power inverters, ... 2025-07-11 00:37:58
...Power Consumption SMPS Super Junction MOSFET For High Power Application Product Description: One of the key features of this MOSFET is its very ... 2025-07-11 00:37:58
... Resistance: Low Rds(ON) Material: Silicon Power Consumption: Low Power Loss Thermal Robustness Motor Driving Advanced Trench Technology Technical ... 2025-07-11 00:37:58
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