China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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high power mosfet to 247

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5A 650V 780mΩ N Channel Super Junction MOSFET TO-252 Surface Mount Hign Power Mos N-channel Super Junction MOSFET Part No.:LC65R900D Package:TO-252 ... 2025-07-11 00:37:58
... • Low collector to emitter saturation voltage • Easy parallel switching capability • Short circuit withstands time 10μs • High ruggedness ... 2025-07-11 00:37:58
5A 650V 780mΩ N Channel Super Junction MOSFET For Solar Inverters N-channel Super Junction MOSFET Part No.:LC65R900F Package:TO-220F MAIN CHARACTERIST... 2025-07-11 00:37:58
...247 Enhancement Mode Power IGBT High Current Capacity N-Channel Enhancement Mode Power IGBT LGT25N120B FEATURES • Trench and field-stop technology ... 2025-07-11 00:37:58
High Efficiency Power IGBT For Solar Panels Or Batteries Into AC Power Product Description: This High Power IGBT is equipped with faster switching ... 2025-07-11 00:37:58
Low Reverse Transfer Capacitance High Voltage MOSFET For Switched Mode Power Supplies *, *::before, *::after {box-sizing: border-box;}* {margin: 0;... 2025-07-11 00:37:58
...Low gate charge • Low RDS(on) per chip area(Low FOM) • Very low switching and conduction loss • Extremely high commutation ruggedness APPLICATIONS ... 2025-07-11 00:37:58
... in high voltage and high power applications. With a wide range of voltage rating from 650V to 1200V, this device is capable of delivering ... 2025-07-11 00:37:58
...Power IGBT 650V-1200V Energy Saving For Switching Switch Product Description: The High Power IGBT is a reliable and efficient semiconductor device ... 2025-07-11 00:37:58
...t make it stand out in the market. Firstly, it has a high breakdown voltage, making it suitable for PWM in motor control and industrial automation ... 2025-02-08 13:29:40
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