China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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efficient low vgs mosfet

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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efficient low vgs mosfet

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...Low VCE(sat) • Reliable and Rugged High ruggedness performance • Very tight parameter distribution • Positive VCE (sat) temperature coefficient • ... 2025-07-11 00:37:58
...Low collector to emitter saturation voltage • Easy parallel switching capability • Short circuit withstands time 10μs • High ruggedness performance ... 2025-07-11 00:37:58
... • Very tight parameter distribution • Positive VCE (sat) temperature coefficient • High efficiency for motor control • Excellent current sharing ... 2025-07-11 00:37:58
... (mA) MBR30150CT TO-220AB 1 30 150 15 0.93 1.0 5 180 175 Product Description: One of the key features of Schottky Diodes is their low forward ... 2025-02-08 13:30:15
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