China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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efficient low vgs mosfet

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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efficient low vgs mosfet

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...Low VF Schottky for Operating Temperature Range -55°C To 150°C Part Number Package Die Io (A) VBR @IR VF(25℃) @IF IR(25℃) @VBR VF(125℃) @IF IR (125... 2025-07-11 00:37:59
... 170 10 20 0.35 0.46 12 250 150 Product Description: Designed with fast switching speed and high efficiency, the SBT40L45FCT Low VF Schottky ... 2025-07-11 00:37:59
... 30 1.35 1.60 0.03 1 - - - 420 50 150 Product Description: Fast Recovery Diodes are designed to provide high efficiency, low VF, and high current ... 2025-02-08 13:30:57
... 0.60 20 50 3 0.28 11 180 150 Product Description: This product's fast switching capability allows for faster and more efficient power management, 2025-02-08 13:31:38
20A300V Low VF Schottky Solar Panel Configurations TO-220F HBM20L300FCT Product Description: The product comes with a model number of HBM20L300FCT ... 2025-02-08 13:31:39
...) Max (uA) If (A) Typ (V) Typ (mA) MBR30200PT TO-247 1 30 200 15 0.95 1.0 5 180 175 Product Description: With their low VF, the MBR30200PT Schottky ... 2025-02-08 13:30:17
...high voltage applications with ease. It is also designed with low junction capacitance, which makes it efficient in high-frequency operations. This ... 2025-07-11 00:37:58
...Low Leakage Cool Mos The Semiconductor For Power Applications This particular product is a Type N semiconductor with low junction capacitance, ... 2025-07-11 00:37:58
...Low Efficiency Schottky Diodes For Frequency Multiplier Circuits TO-247S MBR6045PTS Part Number Package Die Io (A) VBR VF(25℃) IR(25℃) VF(125℃) IR ... 2025-02-08 13:30:44
Product Description: The High Power Semiconductor is particularly useful in charging pile applications for electric vehicles, where high voltage power ... 2025-07-11 00:37:58
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