Plasma Enhanced Chemical Vapor Deposition System

Main parameter index:
1. equipment: deposition chamber, molecular pumping system, upper and lower electrodes, gas path system, power supply and temperature control and equipment control system
2. deposition chamber: Φ350XH350mm
3. upper electrode: multi layer uniform intake, size is Φ150mm
4. electrode: rotary heating, room temperature -600℃ adjustable, temperature ≤±3℃, the sizeΦ 100mm
5.RF power 500W, equipped with automatic matching device
6. mass flow meter control work air intake
7. control system adopts touch screen +PLC control