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sic substrate for power electronics

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SHANGHAI FAMOUS TRADE CO.,LTD

City: shanghai

Province/State:shanghai

Country/Region:china

Tel:86-1580-1942596

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sic substrate for power electronics

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...Substrate 4" Sic 3C-N Diameter 100mm Conductive Type Zero MPD Production Grade 3C-SiC (Cubic Silicon Carbide) is a wide bandgap semiconductor ... 2025-06-18 18:23:45
... 6H-Semi sic wafer ,customized sic substrates , 2inch 6H-N sic wafers , sic crystal ingots ,Silicon Carbide Wafer This 2-inch 6H semi-insulating ... 2025-06-18 18:22:27
... 1.12 3.26 3.41 Breakdown electric field MV/cm 0.23 2.2 3.3 Electron mobility cm^2/Vs 1400 950 1500 Drift speed 10^7 cm/s 1 2.7 2.5 Thermal ... 2026-04-20 00:09:41
...Sic wafer description 12inch Sic wafer silicon carbide 4H-N type production grade dummy grade large size A 12-inch silicon carbide (SiC) substrate ... 2025-06-18 18:24:08
...4H-P SIC Silicon Carbide Wafer For Photovoltaics Thickness 350μm Diameter 50.8mm Zero Grade 4H-P silicon carbide (SiC) is an important semiconducto... 2025-06-18 18:23:41
...Carbide Sic wafer 4H-P Type Diameter 100mm Thickness 350 μm Prime Grade Research Grade 4H-P silicon carbide (SiC) is an important semiconductor ... 2025-06-18 18:23:42
...SiC Carrier Plate High-Purity SiC Coated Carrier Plate for Wafer Handling and Transfer The SiC Carrier Plate (Silicon Carbide Carrier Plate) is a ... 2025-06-18 18:24:15
...SiC) Powder 99.9999% (6N) HPSI Type 100μm Particle Size SIC Crystal Growth Silicon carbide powder (SiC), as a core material for third-generation ... 2025-11-21 16:58:04
...6inch SiC epitaxial wafer 6inch SiC Epitaxial Wafer Diameter 150mm N type P type for 5G Communication As a core material for silicon carbide (SiC) ... 2025-07-10 14:19:48
SiC Epi Wafer Overview​ ​​4H 6inch SiC Epitaxial Wafer 100μm/200μm/300μm for Ultra-High Voltage (UHV) MOS Device The 4H-SiC epitaxial wafer is a core ... 2025-09-06 00:17:06
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