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high hardness sic substrate
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... Lattice Parameters a=3.076 Å c=10.053 Å a=3.073 Å c=15.117 Å Stacking Sequence ABCB ABCACB Mohs Hardness ≈9.2 ≈9.2 Density 3.21 g/cm3 3.21 g/cm3 ...
2025-09-28 17:22:43
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... Brand Semiconductor Substrate SIC Silicon Carbide Wafer For Solar Photovoltaic, 8inch Silicon Carbide Substrate Production Grade N Type 4H SiC ...
2025-06-18 18:22:51
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...Sic Silicon Carbide Substrate 4H-P Diameter 150mm Thickness 350μm Zero MPD Production, Standard Production Grade 4H-P silicon carbide (SiC) is an ...
2025-06-18 18:23:43
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...SIC ceramic customized shape wear-resistance Al2O3 ceramic parts mirror polished SIC ceramic tube customized shape wear-resistance Al2O3 ceramic ...
2025-06-18 18:27:37
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...Substrate SiC Chip for Advanced Electronics Product Overview: The Silicon Carbide (SiC) rectangle substrate is an advanced single-crystal ...
2026-04-20 00:09:41
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High purity un-doped 4inch 4H-Semi silicon carbide sic wafers for optical lens or device Silicon Carbide SiC crystal substrate wafer carborundum ...
2025-06-18 18:22:39
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... composed of silicon (Si) and carbon (C), which has unique physical and chemical properties. 6H-SiC is a polytype of silicon carbide with hexagonal ...
2025-06-18 18:24:05
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...Substrate for Power Electronics, RF Devices & UV Optoelectronics Product Overview The 4H-SiC Substrate is a high-purity, single-crystal silicon ...
2026-04-20 00:09:41
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...Sic Silicon Carbide Substrate 6H Low Resistance High P-doped Type Diameter 50.8mm 6H-SiC (Hexagonal Silicon Carbide) is a wide bandgap semiconducto...
2025-06-18 18:23:26
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SiC seed wafer 8inch thickness 600±50um 4H type production grade for Silicon carbide crystal growth SiC seed wafer's abstract SiC seed wafers are ...
2025-06-18 18:23:42
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