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SHANGHAI FAMOUS TRADE CO.,LTD

City: shanghai

Province/State:shanghai

Country/Region:china

Tel:86-1580-1942596

Contact Person:
Mr.Wang View Contact Details

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sic substrate

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Sic Optical Lens 10x10x10mmt 4H-SEMI HPSI Shape And Size Customized 6SP Thickness 10.05

Abstract of Sic optical lens Sic optical lens 10x10x10mmt 4H-SEMI HPSI shape and size customized 6SP Thickness 10.05 ZMSH offers high-performance ... 2025-06-18 18:24:11

12inch Diameter 300mm SIC Substrate Epitaxial Polished Wafer Silicon Carbide Ingot Prime Grade 4H-N Type Conductive Solar Photovoltaic

12inch Diameter 300mm SIC Substrate Epitaxial Polished Wafer Silicon Carbide Ingot Prime Grade 4H Type Conductive Solar Photovoltaic Product ... 2025-06-18 18:24:09

12inch Sic Wafer Silicon Carbide 4H-N Type Production Grade Dummy Grade Large Size

12inch Sic wafer description 12inch Sic wafer silicon carbide 4H-N type production grade dummy grade large size A 12-inch silicon carbide (SiC) ... 2025-06-18 18:24:08

12inch 300mm SiC Silicon Carbide Wafer 4H-N Type Dummy Prime Research Grade Multiple Applications

12inch 300mm SiC Silicon Carbide Wafer 4H-N Type Dummy Prime Research Grade Multiple Applications Product introduction SiC, commonly referred to as ... 2025-06-18 18:24:07

2inch/4inch/6inch/5.05.0 Mm/10.010.0 Mm Sic Silicon Carbide Substrate Type 3C-N On Axis: < 111 > ± 0.5° Production Grade Dummy Grade

Product Description: 2inch/4inch/6inch/5.0*5.0 mm/10.0*10.0 mm Sic Silicon Carbide Substrate Type 3C-N On axis: < 111 > ± 0.5° Production Grade Dummy ... 2025-06-18 18:24:06

sic substrate

sic substrate

Sic Optical Lens 10x10x10mmt 4H-SEMI HPSI Shape And Size Customized 6SP Thickness 10.05

12inch Diameter 300mm SIC Substrate Epitaxial Polished Wafer Silicon Carbide Ingot Prime Grade 4H-N Type Conductive Solar Photovoltaic

12inch Sic Wafer Silicon Carbide 4H-N Type Production Grade Dummy Grade Large Size

12inch 300mm SiC Silicon Carbide Wafer 4H-N Type Dummy Prime Research Grade Multiple Applications

2inch/4inch/6inch/5.05.0 Mm/10.010.0 Mm Sic Silicon Carbide Substrate Type 3C-N On Axis: < 111 > ± 0.5° Production Grade Dummy Grade

2inch 4inch 6inch Sic Silicon Carbide Substrate 6H High P-doped Type Off Axis 4.0°toward Prime Grade Dummy Grade

Silicon Carbide Wafer Sic 6H-P Type Off Axis 2.0° Toward Production Grade Research Grade

Sic Silicon Carbide Substrate 6H-P Type On Axis 0° Mohs Hardness 9.2 For Laser Device

Silicon Carbide Wafer Sic Substrate 4H-P Type Off Axis 4.0°toward Zero Grade For Temperature Sensor

2inch / 4inch / 6inch Sic Silicon Carbide Substrate 4H-P Type Off Axis 2.0° Toward Production Grade