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rohs transistor output optocoupler
Selling leads
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... FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in ...
2024-12-09 12:12:55
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... FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in ...
2024-12-09 18:59:29
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... in the 440- to 520-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate ...
2024-12-09 18:59:29
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MRFE6VP6300HR5 RF Mosfet LDMOS (Dual) 50V 100mA 230MHz 26.5dB 300W NI-780-4 These high ruggedness devices are designed for use in high VSWR industrial ...
2024-12-09 12:12:55
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MRFE6VP5600HR5 RF Mosfet LDMOS (Dual) 50V 100mA 230MHz 25dB 600W NI-1230 These high ruggedness devices are designed for use in high VSWR industrial ...
2024-12-09 12:12:55
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LTV817C Optoisolator Transistor Output 5000Vrms 1 Channel 4-DIP Applications 1. Computer terminals. 2. System appliances, measuring instruments. 3. ...
2024-12-09 12:31:15
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LTV817C Optoisolator Transistor Output 5000Vrms 1 Channel 4-DIP Applications 1. Computer terminals. 2. System appliances, measuring instruments. 3. ...
2024-12-09 18:59:14
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MRFE6VP6300HR5 RF Mosfet LDMOS (Dual) 50V 100mA 230MHz 26.5dB 300W NI-780-4 These high ruggedness devices are designed for use in high VSWR industrial ...
2024-12-09 18:59:29
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MRFE6VP5600HR5 RF Mosfet LDMOS (Dual) 50V 100mA 230MHz 25dB 600W NI-1230 These high ruggedness devices are designed for use in high VSWR industrial ...
2024-12-09 18:59:29
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...transistor for broadcast and industrial applications in the HF to 128 MHz band. 1. 2 Features and benefits Typical pulsed performance at frequency ...
2024-12-09 12:12:55
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