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high power igbt module
Selling leads
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... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power ...
2024-12-09 18:59:29
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STGP14NC60KD GP14NC60KD IGBT 600V 25A 80W Through Hole TO-220AB Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 25A ...
2024-12-09 12:35:29
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STGP14NC60KD GP14NC60KD IGBT 600V 25A 80W Through Hole TO-220AB Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 25A ...
2024-12-09 18:59:29
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..., Ic 1.75V @ 15V, 20A Power - Max 288W Switching Energy 750µJ (off) Input Type Standard Gate Charge 170nC Td (on/off) @ 25°C -/260ns Test ...
2024-12-09 18:59:29
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... (Dual), Common Source 50V 40mA 108MHz 24.4dB 1400W SOT539A Features eXtremely rugged high-power delivery up to 1400 W Excellent stability under ...
2024-12-09 18:59:29
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RA03M8087M-101 806-870MHz 3.6W 7.2V, 2 Stage Amp. RF Power Transistor For PORTABLE RADIO Description The RA03M8087M is a 3.6-watt RF MOSFET Amplifier ...
2024-12-09 12:12:55
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RA30H1317M Power Mosfet Transistor for Mobile Radio use 135-175MHz 30W 12.5V DESCRIPTION The RA30H1317M is a 30-watt RF MOSFET Amplifier Module for 12...
2024-12-09 12:12:55
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M68702H 150-175MHz, 12.5V, 60W, RF Power module transistor for FM MOBILE RADIO List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND ...
2024-12-09 12:12:55
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RA03M8087M-101 806-870MHz 3.6W 7.2V, 2 Stage Amp. RF Power Transistor For PORTABLE RADIO Description The RA03M8087M is a 3.6-watt RF MOSFET Amplifier ...
2024-12-09 18:59:29
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RA30H1317M Power Mosfet Transistor for Mobile Radio use 135-175MHz 30W 12.5V DESCRIPTION The RA30H1317M is a 30-watt RF MOSFET Amplifier Module for 12...
2024-12-09 18:59:29
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