241 - 250 of 410
power mosfet transistors
Selling leads
|
...Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS...
2024-12-09 21:52:33
|
|
... control Switch Mode Power Supplies (SMPS) Power-Over-Ethernet (PoE) Solar inverters Automotive applications Logic Level Transistor Description: ...
2024-12-09 21:52:33
|
|
HXY4616 30V Complementary MOSFET Description The HXY4616 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. This ...
2024-12-09 18:42:28
|
|
|
HXY4616 30V Complementary MOSFET Description The HXY4616 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. This ...
2024-12-09 21:52:33
|
|
AOD417 P-Channel Enhancement Mode Field Effect Transistor General Description The AOD417 uses advanced trench technology to provide excellent R DS(ON) ...
2024-12-09 19:03:13
|
|
AOD454A N-Channel Enhancement Mode Field Effect Transistor General Description The AOD454A uses advanced trench technology and design to provide ...
2024-12-09 19:03:13
|
|
AOD480 30V N-Channel MOSFET General Description The AOD480 uses advanced trench technology and design to provide excellent R DS(ON) with low gate ...
2024-12-09 19:03:13
|
|
|
AOD417 P-Channel Enhancement Mode Field Effect Transistor General Description The AOD417 uses advanced trench technology to provide excellent R DS(ON) ...
2024-12-09 21:52:33
|
|
|
AOD454A N-Channel Enhancement Mode Field Effect Transistor General Description The AOD454A uses advanced trench technology and design to provide ...
2024-12-09 21:52:33
|
|
|
AOD480 30V N-Channel MOSFET General Description The AOD480 uses advanced trench technology and design to provide excellent R DS(ON) with low gate ...
2024-12-09 21:52:33
|