41 - 50 of 312
n channel mosfet transistor
Selling leads
|
HXY4435 30V P-Channel MOSFET Description A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air ...
2024-12-09 21:52:33
|
|
HXY4441 30V P-Channel MOSFET Description A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air ...
2024-12-09 21:52:33
|
|
20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and ...
2024-12-09 18:42:28
|
|
|
20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and ...
2024-12-09 21:52:33
|
|
12H02TS 20V N+N-Channel Enhancement Mode MOSFET Description The 12H02TS uses advanced trench technology to provide excellent RDS(ON) and low gate ...
2024-12-09 18:42:28
|
|
|
12H02TS 20V N+N-Channel Enhancement Mode MOSFET Description The 12H02TS uses advanced trench technology to provide excellent RDS(ON) and low gate ...
2024-12-09 21:52:33
|
|
MOSFET Transistor AP2N1K2EN1 Original Electronic Component / IC Chips Description AP2N1K2E series are from Advanced Power innovated design and silicon ...
2024-12-09 19:34:01
|
|
|
MOSFET Transistor AP2N1K2EN1 Original Electronic Component / IC Chips Description AP2N1K2E series are from Advanced Power innovated design and silicon ...
2024-12-09 21:52:33
|
|
FS2A THRU FS2M SURFACEMOUNTFASTRECOVERYRECTIFIER ReverseVoltage-50to1000VoltsForwardCurrent-2.0Ampere FEATURE The plastic package carries Underwriters ...
2024-12-09 18:42:28
|
|
FS1A THRU FS1M SURFACE MOUNT FAST RECOVERY RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current -1.0 Ampere FEATURE The plastic package ...
2024-12-09 18:42:28
|