China Mosfet Power Transistor manufacturer
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Shenzhen Hua Xuan Yang Electronics Co.,Ltd Our electronic components semiconductor is your most correct choice, because we are professional, honest, high quality, low price
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high voltage switching diode

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:+86--13417075252

Contact Person:
Mr.David Lee
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high voltage switching diode

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...Switching Applications Complement to TIP41/41A/41B/41C MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter TIP42 TIP42A TIP42B TIP42C ... 2024-12-09 18:42:28
TO-252-2L Plastic-Encapsulate Transistors D882M TRANSISTOR (NPN) FEATURE Power Dissipation MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol ... 2024-12-09 21:52:33
...TRANSISTOR (NPN) FEATURE Switching Transistor Marking :2X MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO ... 2024-12-09 21:52:33
...Switching Applications Complement to TIP41/41A/41B/41C MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter TIP42 TIP42A TIP42B TIP42C ... 2024-12-09 21:52:33
...Switching For LED Drive Mosfet Power Transistor Description The AP50N20D uses advanced trench technology to provide excellent RDS(ON) and low gate ... 2024-12-09 18:45:55
...Switching For LED Drive Mosfet Power Transistor Description The AP50N20D uses advanced trench technology to provide excellent RDS(ON) and low gate ... 2024-12-09 21:52:33
... TO-220-3L Plastic-Encapsulate Diodes​ FEATURE Schottky Barrier Chip Low Power Loss,High Efficiency Guard Ring Die Construction for Transient ... 2024-12-09 18:42:28
... TO-220-3L Plastic-Encapsulate Diodes​ FEATURE Schottky Barrier Chip Low Power Loss,High Efficiency Guard Ring Die Construction for Transient ... 2024-12-09 21:52:33
... to provide excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for ... 2024-12-09 18:42:28
... to provide excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for ... 2024-12-09 21:52:33
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