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high voltage switching diode
Selling leads
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60V N-Channel AlphaSGT HXY4266 Product Summary VDSS= V ID= 3.6 A 30 z RDS(on) < mΩ@VGS = 10 V 65 z RDS(on) < mΩ@VGS = 4.5V 78 FEATURE TrenchFET Power ...
2024-12-09 18:42:28
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60V N-Channel AlphaSGT HXY4266 Product Summary VDSS= V ID= 3.6 A 30 z RDS(on) < mΩ@VGS = 10 V 65 z RDS(on) < mΩ@VGS = 4.5V 78 FEATURE TrenchFET Power ...
2024-12-09 21:52:33
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SOT-23 Plastic-Encapsulate Transistors FMMT491 TRANSISTOR (NPN) FEATURE Low equivalent on-resistance Marking :491 MAXIMUM RATINGS (Ta=25℃ unless ...
2024-12-09 18:42:28
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SOT-23 Plastic-Encapsulate Transistors FMMT491 TRANSISTOR (NPN) FEATURE Low equivalent on-resistance Marking :491 MAXIMUM RATINGS (Ta=25℃ unless ...
2024-12-09 21:52:33
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...Voltage - 50 to 1000 Volts Forward Current -2.0 Ampere FEATURE The plastic package carries Underwriters Laboratory Flammability Classification 94V...
2024-12-09 18:42:28
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...Voltage - 50 to 1000 Volts Forward Current -2.0 Ampere FEATURE The plastic package carries Underwriters Laboratory Flammability Classification 94V...
2024-12-09 21:52:33
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HXY4616 30V Complementary MOSFET Description The HXY4616 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. Thiscompleme...
2024-12-09 18:42:28
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HXY4616 30V Complementary MOSFET Description The HXY4616 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. Thiscompleme...
2024-12-09 18:42:28
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HXY4616 30V Complementary MOSFET Description The HXY4616 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. Thiscompleme...
2024-12-09 21:52:33
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HXY4616 30V Complementary MOSFET Description The HXY4616 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. Thiscompleme...
2024-12-09 21:52:33
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