51 - 60 of 248
high frequency transistor
Selling leads
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HXY4616 30V Complementary MOSFET Description The HXY4616 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. Thiscompleme...
2024-12-09 21:52:33
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18N20X 200V N-Channel Enhancement Mode MOSFET Product Summary The 18N20X uses advanced Plane technology to provide excellent RDS(ON), low gate charge ...
2024-12-09 21:52:33
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1N5391 THRU 1N5399 Forward Current - 1.5Ampere FEATURES The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ...
2024-12-09 18:42:28
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1N5391 THRU 1N5399 Forward Current - 1.5Ampere FEATURES The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ...
2024-12-09 21:52:33
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FR601 THRU FR607 FAST RECOVERY RECTIFIERS Reverse Voltage - 50 to 1000 Volts Forward Current - 6.0 Amperes FEATURE The plastic package carries ...
2024-12-09 18:42:28
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FR601 THRU FR607 FAST RECOVERY RECTIFIERS Reverse Voltage - 50 to 1000 Volts Forward Current - 6.0 Amperes FEATURE The plastic package carries ...
2024-12-09 21:52:33
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SOT-23 Plastic-Encapsulate Diodes BAW56/BAV70/BAV99 SWITCHING DIODE FEATURES Ÿ Fast Switching Speed Ÿ For General Purpose Switching Applications Ÿ ...
2024-12-09 18:42:28
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SOT-23 Plastic-Encapsulate Diodes BAW56/BAV70/BAV99 SWITCHING DIODE FEATURES Ÿ Fast Switching Speed Ÿ For General Purpose Switching Applications Ÿ ...
2024-12-09 21:52:33
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...Transistor High Rugged Avalanche Mosfet Power Transistor Description -30V/-60A R DS(ON) = 4.8mΩ(typ.) @V GS =-10V R DS(ON) = 6.8mΩ(typ.) @V GS =-4...
2024-12-09 18:50:53
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...Transistor High Rugged Avalanche Mosfet Power Transistor Description -30V/-60A R DS(ON) = 4.8mΩ(typ.) @V GS =-10V R DS(ON) = 6.8mΩ(typ.) @V GS =-4...
2024-12-09 21:52:33
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