China Mosfet Power Transistor manufacturer
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Shenzhen Hua Xuan Yang Electronics Co.,Ltd Our electronic components semiconductor is your most correct choice, because we are professional, honest, high quality, low price
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dual gate mosfet

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:+86--13417075252

Contact Person:
Mr.David Lee
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dual gate mosfet

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MBR1030,35,40,45,50 TO-220A Plastic-Encapsulate Diodes Schottky Bridge Rectifier FEATURE Schottky Barrier Chip Low Power Loss,High Efficiency Guard ... 2024-12-09 21:52:33
FR301 THRU FR307 FAST RECOVERY RECTIFIERS Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Amperes FEATURE The plastic package carries ... 2024-12-09 21:52:33
RS3A THRU RS3M SURFACE MOUNT FASTRE COVERY RECTIFIER FEATURE The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For ... 2024-12-09 21:52:33
RS1A THRU RS1M SURFACE MOUNT FAST RECOVERY RECTIFIER FEATURE Built-in strain relief,ideal for automated placement High forward surge current ... 2024-12-09 21:52:33
... DC-DC converters Motor control Automotive applications Dual Mosfet Switch Description: The AP50N10D uses advanced trench technology to provide ... 2024-12-09 19:11:03
... DC-DC converters Motor control Automotive applications Dual Mosfet Switch Description: The AP50N10D uses advanced trench technology to provide ... 2024-12-09 21:52:33
HXY9926A 20V Dual N-Channel MOSFET General Description The HXY9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and ... 2024-12-09 18:42:28
HXY9926A 20V Dual N-Channel MOSFET General Description The HXY9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and ... 2024-12-09 21:52:33
...-Encapsulate MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω... 2024-12-09 18:42:28
...-Encapsulate MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω... 2024-12-09 21:52:33
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