11 - 20 of 164
dual gate mosfet
Selling leads
MBR1030,35,40,45,50 TO-220A Plastic-Encapsulate Diodes Schottky Bridge Rectifier FEATURE Schottky Barrier Chip Low Power Loss,High Efficiency Guard ...
2024-12-09 21:52:33
|
FR301 THRU FR307 FAST RECOVERY RECTIFIERS Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Amperes FEATURE The plastic package carries ...
2024-12-09 21:52:33
|
RS3A THRU RS3M SURFACE MOUNT FASTRE COVERY RECTIFIER FEATURE The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For ...
2024-12-09 21:52:33
|
RS1A THRU RS1M SURFACE MOUNT FAST RECOVERY RECTIFIER FEATURE Built-in strain relief,ideal for automated placement High forward surge current ...
2024-12-09 21:52:33
|
... DC-DC converters Motor control Automotive applications Dual Mosfet Switch Description: The AP50N10D uses advanced trench technology to provide ...
2024-12-09 19:11:03
|
... DC-DC converters Motor control Automotive applications Dual Mosfet Switch Description: The AP50N10D uses advanced trench technology to provide ...
2024-12-09 21:52:33
|
HXY9926A 20V Dual N-Channel MOSFET General Description The HXY9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and ...
2024-12-09 18:42:28
|
HXY9926A 20V Dual N-Channel MOSFET General Description The HXY9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and ...
2024-12-09 21:52:33
|
...-Encapsulate MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω...
2024-12-09 18:42:28
|
...-Encapsulate MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω...
2024-12-09 21:52:33
|