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bom quotation mosfet power transistor
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HXY4812 0V Dual N-Channel MOSFET General Description The HXY4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. ...
2024-12-09 18:42:28
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HXY4812 0V Dual N-Channel MOSFET General Description The HXY4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. ...
2024-12-09 21:52:33
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... volts. Higher voltages are not so easily achievable. Where the Power MOSFETs are used, it is their low ON resistance that is particularly ...
2024-12-09 18:50:53
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... volts. Higher voltages are not so easily achievable. Where the Power MOSFETs are used, it is their low ON resistance that is particularly ...
2024-12-09 21:52:33
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...Transistor / High Frequency Mosfet Field Effect Transistor Feature 40V/250A R DS(ON) = m(typ.) @ V GS =10V 100% avalanche tested Reliableand ...
2024-12-09 18:50:53
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...Transistor / High Frequency Mosfet Field Effect Transistor Feature 40V/250A R DS(ON) = m(typ.) @ V GS =10V 100% avalanche tested Reliableand ...
2024-12-09 21:52:33
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..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect ...
2024-12-09 18:50:53
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..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect ...
2024-12-09 21:52:33
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SOT-23 Plastic-Encapsulate MOSFETS HXY2312 N-Channel 20-V(D-S) MOSFET Product Summary ID= 6.0 A VDSS=20v RDS(on)
2024-12-09 18:42:28
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SOT-23 Plastic-Encapsulate MOSFETS HXY2312 N-Channel 20-V(D-S) MOSFET Product Summary ID= 6.0 A VDSS=20v RDS(on)
2024-12-09 21:52:33
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