221 - 230 of 386
10a mosfet power switch
Selling leads
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...Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ...
2024-12-09 21:52:33
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...from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. ...
2024-12-09 21:52:33
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AOD486A N-Channel Enhancement Mode Field Effect Transistor General Description The AOD486A uses advanced trench technology and design to provide ...
2024-12-09 19:03:13
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AOD486A N-Channel Enhancement Mode Field Effect Transistor General Description The AOD486A uses advanced trench technology and design to provide ...
2024-12-09 21:52:33
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FR301 THRU FR307 FAST RECOVERY RECTIFIERS Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Amperes FEATURE The plastic package carries ...
2024-12-09 18:42:28
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FR301 THRU FR307 FAST RECOVERY RECTIFIERS Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Amperes FEATURE The plastic package carries ...
2024-12-09 21:52:33
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NCE01P18D NCE P-Channel Enhancement Mode Power MOSFET
2024-12-09 18:45:20
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NCE01P18D NCE P-Channel Enhancement Mode Power MOSFET
2024-12-09 21:52:33
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...given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to...
2024-12-09 18:44:10
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...given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to...
2024-12-09 18:44:10
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