China Mosfet Power Transistor manufacturer
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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MBRB10100CT-B Schottky Bridge Rectifier Low Power Loss High Efficiency

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:+86--13417075252

Contact Person:
Mr.David Lee
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MBRB10100CT-B Schottky Bridge Rectifier Low Power Loss High Efficiency

Place of Origin ShenZhen China
Brand Name Hua Xuan Yang
Certification RoHS、SGS
Minimum Order Quantity 1000-2000 PCS
Price Negotiated
Packaging Details Boxed
Delivery Time 1 - 2 Weeks
Payment Terms L/C T/T Western Union
Supply Ability 18,000,000PCS / Per Day
Model Number MBRB10100CT-B
Power mosfet transistor TO-263-2L Plastic-Encapsulate Diodes
Type Schottky Bridge Rectifier
FEATURE Low Power Loss , High Efficiency
RMS reverse voltage 70V
Product ID MBRB10100CT-B
TJ 125℃
Detailed Product Description

MBR3060CT / MBR3060FCT  TO-220-3L Plastic-Encapsulate Diode


 

FEATURE
 
Schottky Barrier Chip
Low Power Loss,High Efficiency
Guard Ring Die Construction for Transient Protection
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters,Free Wheeling,
and Polarity Protection Applications
 
MAXIMUMRATINGS(Ta=25℃unlessotherwisenoted)
 
ELECTRICALCHARACTERISTICS(Ta=25℃unlessotherwisespecified)
 
 
 
Typical Characteristics
 
 
 
Product Tags: schottky diode bridge rectifier   schottky barrier rectifier diode  
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