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RS3A THRU RS3M Dual Switching Diode Forward Current - 3.0 Amperes

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:+86--13417075252

Contact Person:
Mr.David Lee View Contact Details

Place of Origin	ShenZhen China
Brand Name	Hua Xuan Yang
Certification	RoHS、SGS
Minimum Order Quantity	1000-2000 PCS
Price	Negotiated
Packaging Details	Boxed
Delivery Time	1 - 2 Weeks
Payment Terms	L/C T/T Western Union
Supply Ability	18,000,000PCS / Per Day
Model Number	RS3A THRU RS3M
Weight	0.003 ounce, 0.093 grams
Feature	High forward surge current capability
Type	General Purpose Silicon Rectifier
IFSM	100.0Amps
VF	1.3Volts
I(AV)	3.0Amps

Detailed Product Description

RS3A THRU RS3M SURFACE MOUNT everse Voltage - 50 to 1000 Volts Forward Current - 3.0 Amperes

FEATURES

The plastic package carries Underwriters Laboratory

Flammability Classification 94V-0

For surface mounted applications Low reverse leakage

Built-in strain relief,ideal for automated placement

High forward surge current capability

High temperature soldering guaranteed:

250 C/10 seconds at terminals Glass passivated chip junction

MECHANICAL DATA

Case: JEDEC DO-214AA molded plastic body over passivated chip

Terminals: Solder plated, solderable per MIL-STD-750, Method 2026

Polarity: Color band denotes cathode end

Mounting Position: Any

Weight:0.003 ounce, 0.093 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

MDD Catalog Number	SYMBOLS	RS3A	RS3B	RS3D	RS3G	RS3J	RS3K	RS3M	UNITS
Maximum repetitive peak reverse voltage	VRRM	50	100	200	400	600	800	1000	VOLTS
Maximum RMS voltage	VRMS	35	70	140	280	420	560	700	VOLTS
Maximum DC blocking voltage	VDC	50	100	200	400	600	800	1000	VOLTS
Maximum average forward rectified current at TL=75 C	I(AV)	3.0							Amps
Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method)	IFSM	100.0							Amps
Maximum instantaneous forward voltage at 3.0A	VF	1.3							Volts
Maximum DC reverse current TA=25 C at rated DC blocking voltage TA=100 C	IR	5.0 100.0							mA
Maximum reverse recovery time (NOTE 1)	trr	150				250	500		ns
Typical junction capacitance (NOTE 2)	CJ	60.0							pF
Typical thermal resistance (NOTE 3)	RqJA	50.0							C/W
Operating junction and storage temperature range	TJ,TSTG	-50 to +150							C

Note:

1. Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A

2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.

3. Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted

RATINGS AND CHARACTERISTIC CURVES RS3A THRU RS3M

Product Tags: high voltage switching diode dual series switching diode

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RS2A THRU RS2M Surface Mount Diode , Dual Series Switching Diode

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