151 - 160 of 171
single wafer carrier case
Selling leads
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2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafers, ...
2025-05-06 20:40:53
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Abstract The 4-H Semi-Insulating SiC substrate is a high-performance semiconductor material with a wide range of applications. It derives its name ...
2025-05-06 20:41:16
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6 inch POD /8 inch POD /FOSB(Fiber Optic Splice Box) /Delivery box/ Storage Box /RSP(Remote Service Platform) /FOUP(Front Opening Unified Pod) PRODUCT ...
2025-05-06 20:47:39
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Silicon Carbide Monocrystalline Growth Furnace Resistance Method 6 8 12inch SiC Ingot Growth Furnace
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... proudly introduces its SiC single crystal growth furnace, an advanced solution engineered for high-performance SiC wafer manufacturing. Our ...
2025-05-06 20:43:51
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SiC seed crystals, specifically those with diameters of 153, 155, 205, 203, and 208 mm Abstract of the SiC seed crystals SiC seed crystals are small ...
2025-05-29 00:09:29
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...wafers for GaN epitaxial growth；0.1mm/100um 2inch sapphire c-axis substrates 2Inch 3inch 4inch 0.43mm 0.1mm ultrathin thickness double side polish ...
2025-05-06 20:38:50
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2inch InP wafers 3inch 4inch N/P TYPE InP Semiconductor Substrate Wafers Doped S+/ Zn+ /Fe + growth (modified VFG method) is used to pull a single ...
2025-05-06 20:44:37
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...Sapphire The growth of superconducting compounds / Gallium Nitride Infrared detectors Hybrid microelectronics Polishing carriers Hostile environmen...
2025-05-06 20:37:41
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... wafer and substrate applications include: Microelectronic IC applications SOS Silicon-on-Sapphire The growth of superconducting compounds / ...
2025-05-06 20:37:41
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Introduce Silicon Carbide on Insulator (SiCOI) thin films are innovative composite materials, typically fabricated by depositing a single-crystal, ...
2025-05-27 17:33:30
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