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high temperature resistance sapphire substrate
Selling leads
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...High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafersS/ Customzied as-cut sic wafers About Silicon Carbide ...
2025-05-06 20:40:40
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Fused Silica wafer JGS1 JGS2 BF33 8inch 12inch thickeness 750um±25um Ra ≤ 0.5nm TTV ≤ 10um Fused Silica wafer JGS1 JGS2 BF33 8inch 12inch‘s summary ...
2025-05-06 20:45:40
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...demanding environments requiring high thermal stability, exceptional hardness, and excellent infrared transmission. Compared with traditional glass ...
2025-06-24 07:30:26
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...2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates ...
2025-05-06 20:40:51
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...high-performance materials widely used in industries that require durability, high-temperature stability, and excellent thermal conductivity. SiC ...
2025-05-06 20:47:48
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... resistance heating for efficient silicon carbide crystal growth. It can reach a maximum temperature of 2300°C with a rated power of 80kW. The ...
2025-05-06 20:43:44
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