China Sapphire Substrate manufacturer
SHANGHAI FAMOUS TRADE CO.,LTD
SHANGHAI FAMOUS TRADE CO.,LTD
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high frequency linbo3 crystal ingot

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SHANGHAI FAMOUS TRADE CO.,LTD

City: shanghai

Province/State:shanghai

Country/Region:china

Tel:86--15801942596

Contact Person:
Mr.Wang
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high frequency linbo3 crystal ingot

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... propagation loss, which can be used to fabricate SAW devices with up to 50% bandwidth. The acoustic surface wave properties of lithium niobate ... 2025-05-06 20:45:00
...Ingot and substrate 4H-N/Semi Type SiC Ingots Industrial Dummy2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch ... 2025-07-25 00:10:23
...ingot Ky growth method Highly frequency Ti+ doped (Titanium doped)sapphire single crstal used in laser/Ti Al2O3 Crystal for laser machine,Titanium ... 2025-07-25 00:10:23
...ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafers, sic crystal ingots sic semiconductor ... 2025-05-06 20:40:45
...crystal single side polished silicon wafer sic wafer polishing wafer manufacturer Silicon Carbide SiC Wafer4H-N SIC ingots/High purity 4H-N 4inch ... 2025-05-06 20:42:00
...SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafers, sic crystal ingots sic semiconductor ... 2025-05-06 20:42:01
...Ingot Growth Furnance,4inch 6inch 8inch,PVT Lely TSSG LPE method High Growth Rate SiC Ingot Growth Furnance‘s abstract The SiC Ingot Growth Furnace ... 2025-05-06 20:43:44
...: The ion implantation machine is used to drive high-energy He ions from the upper surface of lithium niobate crystal. When He ions with specific ... 2025-05-06 20:44:59
...SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafers, sic crystal ingots sic semiconductor ... 2025-05-06 20:40:43
...ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafers, sic crystal ingots sic semiconductor ... 2025-05-06 20:40:43
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