China Sapphire Substrate manufacturer
SHANGHAI FAMOUS TRADE CO.,LTD
SHANGHAI FAMOUS TRADE CO.,LTD
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al2o3 single crystal sapphire substrate

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SHANGHAI FAMOUS TRADE CO.,LTD

City: shanghai

Province/State:shanghai

Country/Region:china

Tel:86--15801942596

Contact Person:
Mr.Wang
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al2o3 single crystal sapphire substrate

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...crystal. It belongs to the cubic crystal system. Nd∶GGG doped with Nd is an excellent laser crystal, which can obtain pulsed laser output at room ... 2025-05-06 20:40:33
...crystals substrate wafer for laser device Product Type: Terbium gallium garnet (TGG) crystal substrateProduct Description:TGG crystal with a large ... 2025-05-06 20:40:28
10x10x0.5mmt SrLaAlO4 Wafer Substrate Crystal Product Description Substrate of LSAT Single Crystal LSAT(La0.18Sr0.82Al0.59Ta0.41)O3 Typical Physical ... 2025-05-06 20:40:32
...substrate 4H-N/Semi Type SiC Ingots Industrial Dummy2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm ... 2025-07-31 00:12:25
...Crystal(Titanium Dioxide)Crystal by 10x10x0.5mmt 1sp/ 2sp Product Name: Rutile (TiO2) crystal substrate Product Description: Rutile (TiO2) large ... 2025-05-06 20:40:35
...:Lithium tantalate (LiTaO3) single crystal has a very good electro-optical, piezoelectric and pyroelectric properties, widely used in pyroelectric ... 2025-05-06 20:44:34
Abstract Synthetic sapphire prisms are manufactured using high-purity aluminum oxide (α-Al₂O₃) through advanced crystal growth techniques such as the ... 2025-05-06 20:38:34
...)Crystal Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used ... 2025-05-06 20:42:00
... wafers About Silicon Carbide (SiC)Crystal Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with ... 2025-05-06 20:40:38
... N-type SiC Crystal Wafers Ingots SiC substrate​/2inch/3inch/4inch/6inch/8inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm ... 2025-05-06 20:42:04
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