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SHANGHAI FAMOUS TRADE CO.,LTD
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semiconductor substrate

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SHANGHAI FAMOUS TRADE CO.,LTD

City: shanghai

Province/State:shanghai

Country/Region:china

Tel:86--15801942596

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semiconductor substrate

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N-type SiC on Si Compound Wafer 6inch 150mm SiC type 4H-N Si type N or P N-type SiC on Si Compound Wafer abstract N-type silicon carbide (SiC) on ... 2025-05-06 20:45:18
Silicon wafer N type P Dopant 2inch 4inch 6inch 8inch Resistivity: 0-100 ohm-cm Single side polished Product abstract Silicon wafers are thin slices ... 2025-05-06 20:45:16
2inch silicon wafers p-type n-type CZ growth method BOW ≤30 for LED lighting Silicon wafers' abstract Silicon wafers are the foundational material ... 2025-05-06 20:45:16
SOI Wafer Silicon On Insulator wafer Dopant P BOX Layer 0.4-3 Substrate Orientation 100 111 SOI wafer‘s abstract SOI (Silicon-On-Insulator) wafers are ... 2025-05-06 20:45:15
SOI Wafer Silicon On Insulator 100mm 150mm P type Dopant B Device: 220 Resistivity: 8.5-11.5 ohm-cm Product Detail Page for SOI Wafer (Silicon-On... 2025-05-06 20:45:14
Silicon-on-Insulator SOI wafer 6", 2.5 "m (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron doped ) Silicon-on-Insulator (SOI) Wafer Abstract ... 2025-05-06 20:45:13
Silicon Wafer CZ orientation111 Resistivity: 1-10 (ohm.cm) single side or double side polish Product abstract Our Si wafer offers high purity and ... 2025-05-06 20:45:12
Silicon wafer 4 inch thickness 500+/-20 Resistivity 1-10 ohm·cm Orientation100 double side polish Product abstract Our Precision Ultra-Pure Silicon ... 2025-05-06 20:45:11
3inch InP Indium Phosphide Substrate N-Type Semiconductor VGF growth method 000 001 orientation Product abstract Our InP (Indium Phosphide) products ... 2025-05-06 20:45:10
Epi ready 4inch InP wafers N-type p-type EPF<1000cm^2 with the thickness of 325um±50um Product abstract Our product, the "High-Purity Indium ... 2025-05-06 20:45:10
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