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8-Inch SiC Epitaxial Wafers Yield and Efficiency Scalable Power Electronics

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8-Inch SiC Epitaxial Wafers Yield and Efficiency Scalable Power Electronics

Brand Name ZMSH
Model Number 4 inch
Place of Origin China
Minimum Order Quantity 10
Price 5 USD
Payment Terms T/T
Supply Ability By case
Delivery Time 4-8 weeks
Packaging Details custom cartons
Certification by case
Grade Zero MPD Grade,Production Grade,Research Grade,Dummy Grade
Resistivity 4H-N 0.015~0.028 Ω•cm
Resistivity 4/6H-SI ≥1E7 Ω·cm
Primary Flat {10-10}±5.0° or round shape
TTV/Bow /Warp ≤10μm /≤10μm /≤15μm
Roughness Polish Ra≤1 nm / CMP Ra≤0.5 nm
Detailed Product Description

SiC Epitaxial Wafer Overview

8-inch (200 mm) SiC Epitaxial Wafers are now emerging as the most advanced form factor in the SiC industry. Representing the cutting edge of material science and manufacturing capability, 8” SiC epitaxial wafers offer unparalleled opportunities for scaling up power device production while driving down the cost per device.

As demand for electric vehicles, renewable energy, and industrial power electronics continues to surge globally, 8” wafers are enabling a new generation of SiC MOSFETs, diodes, and integrated power modules with higher throughput, better yield, and lower manufacturing costs.

With wide bandgap properties, high thermal conductivity, and exceptional breakdown voltage, 8” SiC wafers are unlocking new levels of performance and efficiency in advanced power electronics.

 

 


 

How 8” SiC Epitaxial Wafers Are Made

 

Manufacturing 8” SiC epitaxial wafers requires next-generation CVD reactors, precise crystal growth control, and ultra-flat substrate technology:

  1. Substrate Fabrication
    Monocrystalline 8” SiC substrates are produced via high-temperature sublimation techniques and subsequently polished to sub-nanometer roughness.

  2. CVD Epitaxial Growth
    Advanced large-scale CVD tools operate at ~1600 °C to deposit high-quality SiC epitaxial layers onto the 8” substrates, with optimized gas flow and temperature uniformity to handle the larger area.

  3. Tailored Doping
    N-type or P-type doping profiles are created with high uniformity across the entire 300 mm wafer.

  4. Precision Metrology
    Uniformity control, crystal defect monitoring, and in-situ process management ensure consistency from wafer center to edge.

  5. Comprehensive Quality Assurance
    Each wafer is validated via:

    • AFM, Raman, and XRD

    • Full-wafer defect mapping

    • Surface roughness and warp analysis

    • Electrical property measurements


Specifications

 Grade 8InchN-typeSiCSubstrate
1Polytype--4HSiC
2ConductivityType--N
3Diametermm200.00±0.5mm
4Thicknessum700±50µm
5CrystalSurfaceOrientationAxisdegree4.0°toward±0.5°
6Notchdepthmm1~1.25mm
7Notchorientationdegree±5°
8Resistivity(Average)ΩcmNA
9TTVumNA
10LTVumNA
11BowumNA
12WarpumNA
13MPDcm-2NA
14TSDcm-2NA
15BPDcm-2NA
16TEDcm-2NA
17EPDcm-2NA
18ForeignPolytypes--NA
19SF(BSF)(2x2mmgridsize)%NA
20TUA(TotalUsableArea)(2x2mmgridsize)%NA
21NominalEdgeExclusionmmNA
22Visualscratches--NA
23Scratches-cumulativelength(SiSurface)mmNA
24SiFace--CMPpolished
25CFace--CMPpolished
26Surfaceroughness(Siface)nmNA
27Surfaceroughness(Cface)nmNA
28lasermarking--CFace,abovetheNotch
29Edgechip(Front&backSurfaces)--NA
30Hexplates--NA
31Cracks--NA
32Particle(≥0.3um)--NA
33Areacontamination(stains)--None:Bothfaces
34ResidualMetalsContamination(ICP-MS)atom/cm2NA
35EdgeProfile--Chamfer,R-Shape
36Packaging--Multi-waferCassetteOrSingleWaferContainer

 

 


Applications

8” SiC epitaxial wafers enable mass production of reliable power devices in sectors including:

  • Electric Vehicles (EVs)
    Traction inverters, onboard chargers, and DC/DC converters.

  • Renewable Energy
    Solar string inverters, wind power converters.

  • Industrial Drives
    Efficient motor drives, servo systems.

  • 5G / RF Infrastructure
    Power amplifiers and RF switches.

  • Consumer Electronics
    Compact, high-efficiency power supplies.


Frequently Asked Questions (FAQ)

1. What is the benefit of 8” SiC wafers?
They significantly reduce production cost per chip through increased wafer area and process yield.

2. How mature is 8” SiC production?
8” is entering pilot production with select industry leaders—our wafers are available now for R&D and volume ramp.

3. Can doping and thickness be customized?
Yes, full customization of doping profile and epi thickness is available.

4. Are existing fabs compatible with 8” SiC wafers?
Minor equipment upgrades are needed for full 8” compatibility.

5. What is typical lead time?
6–10 weeks for initial orders; shorter for repeat volumes.

6. What industries will adopt 8” SiC fastest?
Automotive, renewable energy, and grid infrastructure sectors.

 


 

Related Products

 

 

12 inch SiC Wafer 300mm Silicon Carbide wafer Conductive Dummy Grade N-Type Research grade

 

4H/6H P-Type Sic Wafer 4inch 6inch Z Grade P Grade D Grade Off Axis 2.0°-4.0° Toward P-type Doping

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