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Square SiC Windows Silicon Carbide Substrate 1x1x0.5mmt SiC Lens

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SHANGHAI FAMOUS TRADE CO.,LTD

City: shanghai

Province/State:shanghai

Country/Region:china

Tel:86--15801942596

Contact Person:
Mr.Wang
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Square SiC Windows Silicon Carbide Substrate 1x1x0.5mmt SiC Lens

Brand Name ZMKJ
Model Number 1x1x0.5mmt
Certification ROHS
Place of Origin China
Minimum Order Quantity 500pcs
Price by case
Payment Terms T/T, Western Union, MoneyGram
Supply Ability 1-50000000pcs/month
Delivery Time 3 weeks
Packaging Details single wafer package in 100-grade cleaning room
Material SiC single crystal 4H-N type
Grade Zero, Research, and Dunmy grade
Thicnkss 0.1 0.2 0.3 0.35 0.43 0.5
Application New energy vehicles
Diameter 2-8inch or 1x1x0.5mmt, 1x1x0.3mmt:
color Green Tea or transpraent
Detailed Product Description

Silicon carbide wafer optical 1/2/3 inch SIC wafer for sale Sic Plate Silicon Wafer Flat Orientation Enterprises for Sale 4inch 6inch seed sic wafer 1.0mm Thickness 4h-N SIC Silicon Carbide Wafer For seed growth 6H-N/6H-Semi 4H HPSI 5*10mmt 10x10mmt 5*5mm polished Silicon Carbide sic substrate chips Wafer

About Silicon Carbide (SiC)Crystal  

Silicon carbide (SiC), or carborundum, is a semiconductor containing silicon and carbon with the chemical formula SiC. SiC is used in semiconductor electronics devices operating at high temperatures, high voltages, or both. SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs.

1. Description
Property
4H-SiC, Single Crystal
6H-SiC, Single Crystal
Lattice Parameters
a=3.076 Å c=10.053 Å
a=3.073 Å c=15.117 Å
Stacking Sequence
ABCB
ABCACB
Mohs Hardness
≈9.2
≈9.2
Density
3.21 g/cm3
3.21 g/cm3
Therm. Expansion Coefficient
4-5×10-6/K
4-5×10-6/K
Refraction Index @750nm
no = 2.61
ne = 2.66
no = 2.60
ne = 2.65
Dielectric Constant
c~9.66
c~9.66
Thermal Conductivity (N-type, 0.02 ohm.cm)
a~4.2 W/cm·K@298K
c~3.7 W/cm·K@298K
 
Thermal Conductivity (Semi-insulating)
a~4.9 W/cm·K@298K
c~3.9 W/cm·K@298K
a~4.6 W/cm·K@298K
c~3.2 W/cm·K@298K
Band-gap
3.23 eV
3.02 eV
Break-Down Electrical Field
3-5×106V/cm
3-5×106V/cm
Saturation Drift Velocity
2.0×105m/s
2.0×105m/s

 

High purity 4inch diameter Silicon Carbide (SiC) Substrate Specification
 

2inch diameter Silicon Carbide (SiC) Substrate Specification 
GradeZero MPD GradeProduction GradeResearch GradeDummy Grade 
 
Diameter50.8 mm±0.2mm 
 
Thickness330 μm±25μm or 430±25um 
 
Wafer OrientationOff axis : 4.0° toward <1120> ±0.5° for 4H-N/4H-SI On axis : <0001>±0.5° for 6H-N/6H-SI/4H-N/4H-SI 
 
Micropipe Density≤0 cm-2≤5 cm-2≤15 cm-2≤100 cm-2 
 
Resistivity4H-N0.015~0.028 Ω•cm 
 
6H-N0.02~0.1 Ω•cm 
 
4/6H-SI≥1E5 Ω·cm 
 
Primary Flat{10-10}±5.0° 
 
Primary Flat Length18.5 mm±2.0 mm 
 
Secondary Flat Length10.0mm±2.0 mm 
 
Secondary Flat OrientationSilicon face up: 90° CW. from Prime flat ±5.0° 
 
Edge exclusion1 mm 
 
TTV/Bow /Warp≤10μm /≤10μm /≤15μm 
 
RoughnessPolish Ra≤1 nm 
 
CMP Ra≤0.5 nm 
 
Cracks by high intensity lightNone1 allowed, ≤2 mmCumulative length ≤ 10mm, single length≤2mm 
 
 
Hex Plates by high intensity lightCumulative area ≤1%Cumulative area ≤1%Cumulative area ≤3% 
 
Polytype Areas by high intensity lightNoneCumulative area ≤2%Cumulative area ≤5% 
 
 
Scratches by high intensity light3 scratches to 1×wafer diameter cumulative length5 scratches to 1×wafer diameter cumulative length5 scratches to 1×wafer diameter cumulative length 
 
 
edge chipNone3 allowed, ≤0.5 mm each5 allowed, ≤1 mm each 

 

 

SiC Applications 

 

Silicon carbide (SiC) crystals have unique physical and electronic properties. Silicon Carbide based devices have been used for short wavelength optoelectronic, high temperature, radiation resistant applications. The high-power and high-frequency electronic devices made with SiC are superior to Si and GaAs-based devices. Below are some popular applications of SiC substrates.

 

Other products

            8inch SiC wafer dummy grade                            2inch SiC wafer

 

Packaging – Logistics
We are concerned with each detail of the package, cleaning, anti-static, and shock treatment.

According to the quantity and shape of the product, we will take a different packaging process! Almost by single wafer cassettes or 25pcs cassettes in the 100-grade cleaning room.

 

Product Tags: Square SiC Windows   Square Silicon Carbide Substrate   4H-N Type Silicon Carbide Wafer  
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