Semi-Insulating SiC Composite Substrates Epi Ready 6inch 150mm For Optoelectronic Devices

Semi-Insulating SiC Composite Substrates Epi ready 6inch 150mm for optoelectronic devices

Summary for Semi-Insulating SiC Composite Substrates

The Semi-Insulating SiC Composite Substrates, designed for optoelectronic devices, offer superior performance with their exceptional properties. The polytype of these substrates is 4H, known for its excellent electronic and thermal properties. With a resistivity of ≥1E8 ohm·cm, these substrates ensure minimal leakage current and reduced electronic noise, crucial for high-precision applications.

A key feature is the transfer layer thickness, which is ≥0.4μm, providing a robust platform for epitaxial layer growth. The substrates exhibit a very low void density, with voids ≤5 per wafer for sizes between 0.5mm and 2mm in diameter. This low defect density ensures high reliability and performance consistency in device fabrication.

These substrates are particularly suitable for high-power and high-frequency optoelectronic devices due to their high breakdown voltage and superior thermal conductivity. The SiC material's high mechanical strength and chemical stability make it ideal for use in harsh environments, ensuring longevity and durability of the devices.

Overall, these Semi-Insulating SiC Composite Substrates are engineered to meet the stringent demands of modern optoelectronic applications, providing a reliable foundation for the development of advanced electronic and photonic devices.

Specifications and Schematic Diagram for Semi-Insulating SiC Composite Substrates

Semi-Insulating SiC Composite Substrates photo exhibition

Semi-Insulating SiC Composite Substrates application

Semi-insulating silicon carbide (SiC) composite substrates have numerous applications across various high-performance and advanced technology fields. Here are some key areas where they are particularly valuable:

1. High-Frequency Electronics:

   • SiC substrates are essential in the fabrication of devices like MESFETs (Metal-Semiconductor Field-Effect Transistors) and HEMTs (High Electron Mobility Transistors), which are used in RF (Radio Frequency) and microwave communications. These devices benefit from SiC's high thermal conductivity and wide bandgap, allowing for high power operation and efficiency.

2. Power Electronics:

   • SiC substrates are crucial in power electronics for applications such as power converters, inverters, and motor drives. They enable the development of devices that can handle higher voltages and currents with improved efficiency and reliability compared to traditional silicon-based devices.

3. Optoelectronics:

   • SiC is used as a substrate for LEDs (Light Emitting Diodes) and photodetectors. The material's properties allow for the creation of UV (Ultraviolet) and blue LEDs with superior performance and longevity.

4. High-Temperature Electronics:

   • Due to its excellent thermal stability, SiC substrates are used in environments with high temperatures, such as aerospace and automotive industries. SiC-based devices can operate reliably in temperatures exceeding 200°C.

5. Quantum Computing:

   • SiC substrates are being explored in the development of quantum computing components. The material's properties are advantageous for creating qubits and other quantum devices.

6. Harsh Environment Sensors:

   • SiC's robustness makes it suitable for sensors operating in harsh environments, such as oil and gas exploration, space exploration, and industrial process monitoring. These sensors can withstand extreme temperatures, pressures, and corrosive environments.

7. Biomedical Devices:

   • In the biomedical field, SiC substrates are used for implantable devices and biosensors due to their biocompatibility and stability. They provide a reliable platform for long-term medical applications.

8. Military and Defense:

   • The high-performance nature of SiC makes it ideal for defense applications, including radar systems, electronic warfare, and communication systems. The material's ability to handle high power and high-frequency signals is crucial in these applications.

By leveraging the unique properties of semi-insulating SiC, including its high thermal conductivity, wide bandgap, and chemical stability, engineers and researchers can develop devices that meet the demanding requirements of these advanced applications.

Q&A

Q:What is semi-insulating SiC?

A:Semi-insulating silicon carbide (SiC) is a type of silicon carbide material that has been engineered to have high electrical resistivity. This characteristic makes it an excellent substrate for the fabrication of high-frequency and high-power electronic devices, such as gallium nitride (GaN) transistors and diodes. Unlike conductive SiC, semi-insulating SiC minimizes parasitic conduction, reducing interference and improving device performance. This material achieves its semi-insulating properties through the introduction of specific dopants or defects that compensate for free charge carriers. Its thermal conductivity and mechanical strength also make it suitable for applications in harsh environments, such as power electronics and telecommunications.