high quality clear quartz substrate , including fused silica wafer
and fused quartz wafer in UV grade , optical grade an
We provides high quality clear quartz substrate , including fused
silica wafer and fused quartz wafer in UV grade , optical grade and
semiconductor grade . Quartz wafer have many unique features such
as high working temperature , high anti corrosion , good thermal
conductivity , high optical transmittance and low dielectric loss ,
these special features make quartz wafer suitable for semiconductor
, photomask , microwave filter , optical lense , and optical fiber
application . Quartz wafer can be fabricated in round or square
shape , with a SEMI flat or without flat , one side polished or two
sides polished , size from 1" to 12 " , thickness range from 0.4 ,
0.5 , 0.7 , 1.1 to 3 mm , ultrasonic cleaning and cleanroom
compatible wafer cassette package are also available. Additionally
, we offer custom specifications designed to your unique needs
including , dimension , SEMI. standard flats , surface roughness ,
edge profile , thickness , flatness , surface quality , cleanliness
package method . We have amorphous quartz wafer in stock and can
machine to your specification with high precision surface finish .
Please contact us for further product information .
Quartz Wafer Feature
| High working temperature | High optical transmission |
| High stability | High anti corrosion |
| Good thermal conductivity | low dielectric loss |
| Stable dielectric constant | Superior mechanical properties |
What's differences ?
Fused silica wafer
( Synthetic silica ) | Fused quartz wafer
( Natual silica ) |
|---|
| High OH content >1200 | Low OH content > 150 |
| Higher transmission in the UV range | Lower transmission in the UV range |
| Free bubbles and inclusions | Contain bubbles and inclusions |
| Very low fluorescence | High fluorescence |
| Impurity 5 ppm | Impurity 20 ~ 40 ppm |
Quartz Wafer Properties
| Chemical formula | SiO2 |
| Mechanical Properties | |
| Density | 2.2 g / cm3 |
| Poisson's ratio | 0.14 ~ 0.17 |
| Young's modulus | 72000 Mpa |
| Rigidity modulus | 31000 Mpa |
| Moh's hardness | 5.5 ~ 6.5 |
| Thermal Properties | |
| Transformation point | 1120 °C |
| Softening point | 1680 °C |
| Specific heat ( 20 ~ 350 °C ) | 670 J / kg °C |
| Thermal conductivity ( 20 °C ) | 1.4 W / m °C |
| Thermal expansion coefficient | 5.5×10 -7 cm / cm °C |
| Electrical Properties | |
| Resistivity | 7E7 ohm-cm |
| Insulating strength | 250 ~ 400 Kv / cm |
| Dielectric constant e | 3.7~ 3.9 |
| Dielectric absorption coefficient. | < 4E4 |
| Dielectric waste coefficient. | < 1E4 |
| Optical Properties | |
| Refractive index ( @ 589 nm ) | Nd =1.4584 |
