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silicon power transistor high current

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silicon power transistor high current

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MMBD1501A LOW LEAKAGE DIODE SOT-23 Plastic-Encapsulate Diodes FEATURE  Low Leakage  High Conductance Marking :A11 MAXIMUM RATINGS (Ta=25℃ unless ... 2024-12-09 20:24:57
MMBD1501A LOW LEAKAGE DIODE SOT-23 Plastic-Encapsulate Diodes FEATURE  Low Leakage  High Conductance Marking :A11 MAXIMUM RATINGS (Ta=25℃ unless ... 2024-12-09 21:36:46
...Transistors A42 TRANSISTOR (NPN) FEATURE Low Collector-Emitter Saturation Voltage High Breakdown Voltage Marking :D965A MAXIMUM RATINGS (Ta=25℃ ... 2024-12-09 20:24:57
...Transistors A42 TRANSISTOR (NPN) FEATURE Low Collector-Emitter Saturation Voltage High Breakdown Voltage Marking :D965A MAXIMUM RATINGS (Ta=25℃ ... 2024-12-09 21:36:46
TO-92 Plastic-Encapsulate Transistors 2N5401 TRANSISTOR (PNP) FEATURE Ÿ Switching and Amplification in High Voltage Ÿ Applications such as Telephony Ÿ ... 2024-12-09 20:24:57
TO-92 Plastic-Encapsulate Transistors 2N5401 TRANSISTOR (PNP) FEATURE Ÿ Switching and Amplification in High Voltage Ÿ Applications such as Telephony Ÿ ... 2024-12-09 21:36:46
...gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. -RoHS ... 2024-12-09 20:35:29
...gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. -RoHS ... 2024-12-09 21:36:46
... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in ... 2024-12-09 20:35:29
... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in ... 2024-12-09 21:36:46
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