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silicon power transistor high current
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MMBD1501A LOW LEAKAGE DIODE SOT-23 Plastic-Encapsulate Diodes FEATURE Low Leakage High Conductance Marking :A11 MAXIMUM RATINGS (Ta=25℃ unless ...
2024-12-09 20:24:57
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MMBD1501A LOW LEAKAGE DIODE SOT-23 Plastic-Encapsulate Diodes FEATURE Low Leakage High Conductance Marking :A11 MAXIMUM RATINGS (Ta=25℃ unless ...
2024-12-09 21:36:46
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...Transistors A42 TRANSISTOR (NPN) FEATURE Low Collector-Emitter Saturation Voltage High Breakdown Voltage Marking :D965A MAXIMUM RATINGS (Ta=25℃ ...
2024-12-09 20:24:57
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...Transistors A42 TRANSISTOR (NPN) FEATURE Low Collector-Emitter Saturation Voltage High Breakdown Voltage Marking :D965A MAXIMUM RATINGS (Ta=25℃ ...
2024-12-09 21:36:46
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TO-92 Plastic-Encapsulate Transistors 2N5401 TRANSISTOR (PNP) FEATURE Ÿ Switching and Amplification in High Voltage Ÿ Applications such as Telephony Ÿ ...
2024-12-09 20:24:57
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TO-92 Plastic-Encapsulate Transistors 2N5401 TRANSISTOR (PNP) FEATURE Ÿ Switching and Amplification in High Voltage Ÿ Applications such as Telephony Ÿ ...
2024-12-09 21:36:46
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...gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. -RoHS ...
2024-12-09 20:35:29
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...gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. -RoHS ...
2024-12-09 21:36:46
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... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in ...
2024-12-09 20:35:29
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... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in ...
2024-12-09 21:36:46
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