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Beijing Silk Road Enterprise Management Services Co.,LTD
Beijing Silk Road Enterprise Management Services Co.,LTD
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high voltage transistor

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General Description The AOD240 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching ... 2024-12-09 20:35:29
General Description The AOD240 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching ... 2024-12-09 21:36:46
...-Continuous Drain Current: 2.5 A Vds-drain-source breakdown voltage: 65 V Rds On-Drain Source On Resistance: 760 mOhms Operating frequency: 1 GHz ... 2024-12-09 20:43:57
...-Continuous Drain Current: 2.5 A Vds-drain-source breakdown voltage: 65 V Rds On-Drain Source On Resistance: 760 mOhms Operating frequency: 1 GHz ... 2024-12-09 21:36:46
... Category: RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistors Transistor Polarity: N-Channel Technology: Si Id-Continuous Drain ... 2024-12-09 20:43:57
... Category: RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistors Transistor Polarity: N-Channel Technology: Si Id-Continuous Drain ... 2024-12-09 21:36:46
8205A SOT-23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V ... 2024-12-09 20:24:57
8205A SOT-23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V ... 2024-12-09 21:36:46
Suitable for high frequency switching power supply 20A 150V Schottky Barrier Diode HBR20150 TO-220C TO-220HF TO-263 APPLICATIONS  High frequency ... 2024-12-09 20:35:29
Suitable for high frequency switching power supply 20A 100V Schottky Barrier Diode HBR20100 TO-220C TO-220HF TO-263 DPAKM APPLICATIONS  High ... 2024-12-09 20:35:29
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