21 - 30 of 38
500mw dual switching diode
Selling leads
|
10A 150V Schottky Barrier Diode HBR10150 TO-220 TO-220HF TO-22OMF APPLICATIONS High frequency switch power supply Free wheeling diodes, polarity ...
2024-12-09 21:36:46
|
|
10A 200V Schottky Barrier Diode HBR10200 TO-220 TO-220HF TO-263 TO-DPAKM APPLICATIONS High frequency switch power supply Free wheeling diodes, ...
2024-12-09 21:36:46
|
|
FEATURES 1.8 V to 5.5 V single supply 4 Ω (max) on resistance Low on resistance flatness −3 dB bandwidth >200 MHz Tiny package options 8-lead MSOP 3 ...
2024-12-09 20:43:57
|
|
|
FEATURES 1.8 V to 5.5 V single supply 4 Ω (max) on resistance Low on resistance flatness −3 dB bandwidth >200 MHz Tiny package options 8-lead MSOP 3 ...
2024-12-09 21:36:46
|
|
HXY4812 0V Dual N-Channel MOSFET General Description The HXY4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. ...
2024-12-09 20:24:57
|
|
HXY4812 30V Dual N-Channel MOSFET General Description The HXY4822A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. ...
2024-12-09 20:24:57
|
|
...Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V 32m GS 1 2 ...
2024-12-09 20:24:57
|
|
|
HXY4812 0V Dual N-Channel MOSFET General Description The HXY4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. ...
2024-12-09 21:36:46
|
|
|
HXY4812 30V Dual N-Channel MOSFET General Description The HXY4822A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. ...
2024-12-09 21:36:46
|
|
|
...Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V 32m GS 1 2 ...
2024-12-09 21:36:46
|