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PBHV8540X PBHV8540 Nexperia Bipolar BJT Transistor Discrete Semiconductors

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Country/Region:china

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PBHV8540X PBHV8540 Nexperia Bipolar BJT Transistor Discrete Semiconductors

Brand Name Nexperia USA Inc.
Model Number PBHV8540X,115
Certification ROHS
Place of Origin CHINA
Minimum Order Quantity 10
Price Negotiated
Payment Terms T/T, Western Union
Supply Ability 500000pcs
Delivery Time 2-15days
Packaging Details Standard package
Family Discrete Semiconductor Products
Category Electronic Components-Transistors
Base part number PBHV8540
Details Bipolar (BJT) Transistor NPN 400 V 500 mA 30MHz 520 mW
Type Transistors - FETs, MOSFETs - Single
Description TRANS NPN 400V 0.5A SOT89
Package SOT-89
Mounting Type Surface Mount
Stock In Stock
Detailed Product Description

PBHV8540X PBHV8540 Nexperia Bipolar (BJT) Transistor 500V 0.5 A NPN A NPN high-voltage low VCEsat (BISS) transistor

Discrete Semiconductor Products-A NPN high-voltage low VCEsat (BISS) transistor

 

 

Description:

NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9040X.

 

Application:

• LED driver for LED chain module

• LCD backlighting

• Automotive motor management

• Hook switch for wired telecom

• Switch Mode Power Supply (SMPS)

 

Features :

• High voltage

• Low collector-emitter saturation voltage VCEsat

• High collector current capability IC and ICM

• High collector current gain hFE at high IC

• AEC-Q101 qualified

 

Name Description Version

PBHV8540X SOT89 plastic surface-mounted package; die pad for good heat transfer; 3 leads

Product Technical Specifications

 

Category
Discrete Semiconductor Products
 
Transistors - Bipolar (BJT) - Single
Mfr
Nexperia USA Inc.
Part Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
500 mA
Voltage - Collector Emitter Breakdown (Max)
400 V
Vce Saturation (Max) @ Ib, Ic
250mV @ 60mA, 300mA
Current - Collector Cutoff (Max)
100nA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 50mA, 10V
Power - Max
520 mW
Frequency - Transition
30MHz
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-243AA
Supplier Device Package
SOT-89
Base Product Number
PBHV8540
Part numberPBHV8540X,115
EU RoHSCompliant with Exemption
ECCN (US)EAR99
Part StatusActive
HTS8541.29.00.95

 

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Product Tags: PBHV8540X   PBHV8540   Nexperia Bipolar BJT Transistor  
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