IHW30N160R2 IGBT Transistor H30R1602 Power Semiconductor

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Angel Technology Electronics Co

City: shenzhen

Province/State:hongkong

Country/Region:china

Tel:86-0755-83677737

Contact Person:
Mrs.Sophia View Contact Details

IHW30N160R2 IGBT Transistor H30R1602 Power Semiconductor

Brand Name	Infineon Technologies/International Rectifier IOR
Model Number	IHW30N160R2FKSA1
Certification	ROHS
Place of Origin	CHINA
Minimum Order Quantity	10pieces
Price	Negotiated
Payment Terms	T/T, Western Union
Supply Ability	500000pcs
Delivery Time	2-15days
Packaging Details	Standard package
Family	Discrete Semiconductor Products
Category	Electronic Components-IGBTs Transistors
IGBT TYPE	NPT, Trench Field Stop
Base part number	H30R1602
Details	IGBT 1600V 60A 312W TO247-3
Applications	Inductive Cooking ，Soft Switching Applications
Description	IGBT NPT, Trench Field Stop 1600 V 60 A 312 W Through Hole PG-TO247-3-1
Package	TO247
Mounting Type	Through hole
Stock	In Stock

Detailed Product Description

IHW30N160R2 IGBTs Transistors H30R1602 Soft Switching Series Power Semiconductors IC IHW30N160R2FKSA1 Soft Switching Series

Applications:
• Inductive Cooking
• Soft Switching Applications

Description:

TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode
Features:
• Powerful monolithic Body Diode with very low forward voltage
• Body diode clamps negative voltages
• Trench and Fieldstop technology for 1600 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
• Low EMI
• Qualified according to JEDEC1
for target applications
• Pb-free lead plating; RoHS compliant

Specification:IGBT NPT, Trench Field Stop 1600 V 60 A 312 W Through Hole PG-TO247-3-1

Part number	IHW30N160R2
Category	Discrete Semiconductor Products
	Transistors - IGBTs - Single
Series	TrenchStop®
Package	Tube
IGBT Type	NPT, Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	1600 V
Current - Collector (Ic) (Max)	60 A
Current - Collector Pulsed (Icm)	90 A
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 30A
Power - Max	312 W
Switching Energy	4.37mJ
Input Type	Standard
Gate Charge	94 nC
Td (on/off) @ 25°C	-/525ns
Test Condition	600V, 30A, 10Ohm, 15V
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	PG-TO247-3-1

Environmental & Export Classifications

ATTRIBUTE	DESCRIPTION
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095

Part number	IHW30N160R2FKSA1
Base part number	IHW30N160R2

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.95

Substitutes (1):

IXGH24N170 IXYS

Product Tags: IHW30N160R2 IGBT Transistor H30R1602 Power Semiconductor IHW30N160R2

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