IRFB4310PBF 100V 130A FET HEXFET Power Mosfet IRFB7440PBF 40V 120A

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Angel Technology Electronics Co

City: shenzhen

Province/State:hongkong

Country/Region:china

Tel:86-0755-83677737

Contact Person:
Mrs.Sophia View Contact Details

IRFB4310PBF 100V 130A FET HEXFET Power Mosfet IRFB7440PBF 40V 120A

Brand Name	Infineon Technologies/International Rectifier IOR
Model Number	IRFB7440PBF IRFB4310PBF IRFB4115PBF
Certification	ROHS
Place of Origin	CHINA
Minimum Order Quantity	10pieces
Price	Negotiated
Payment Terms	T/T, Western Union
Supply Ability	500000pcs
Delivery Time	2-15days
Packaging Details	Standard package
Family	Discrete Semiconductor Products
Category	Electronic Components-MOSFET (Metal Oxide)
Series	HEXFET MOSFET (Metal Oxide)
Base part number	IRFB4
Details	N-Channel 180A (Tc) 200W (Tc) Through Hole TO-220AB
Type	Transistors - FETs, MOSFETs - Single
Description	Transistors MOSFET N-CH TO220AB
Package	TO220
Mounting Type	Through hole
Stock	In Stock

Detailed Product Description

IRFB7440PBF 40V 120A IRFB4310PBF 100V 130A IRFB4115PBF 150v 104A Transistors TO-220AB HEXFET FETs MOSFETs

Transistors N-Channel 180A 200W Through Hole TO-220AB HEXFET FETs MOSFETs

---IRFB7440PBF 40V 120A IRFB4310PBF 100V 130A IRFB4115PBF 150v 104A

Description:
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

N-Channel 180A (Tc) 200W (Tc) Through Hole TO-220AB Specification:

Category	Discrete Semiconductor Products
	Transistors - FETs, MOSFETs - Single
Mfr	Infineon Technologies
Series	HEXFET®
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	3.7mOhm @ 75A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	150 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4340 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	200W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3
Base Product Number	IRF1404

Environmental & Export Classifications

ATTRIBUTE	DESCRIPTION
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095

Product Tags: 100V 130A FET HEXFET Power Mosfet IRFB4310PBF IRFB7440PBF

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