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through hole rectifiers diodes
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...manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V ...
2025-07-31 00:22:28
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1200V Automobile Chips FFSB20120A-F085 TO-263 Schottky Diode 32A Surface Mount Product Description Of FFSB20120A-F085 FFSB20120A-F085 High Surge ...
2025-07-30 00:16:18
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...Diode AIDK10S65C5ATMA1 Integrated Circuit Chip TO-263-3 Product Description Of AIDK10S65C5ATMA1 AIDK10S65C5ATMA1 is CoolSiC™ Automotive Schottky ...
2025-07-31 00:22:50
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Integrated Circuit Chip AIDK08S65C5ATMA1 Silicon Carbide Schottky Diode TO-263-3 Product Description Of AIDK08S65C5ATMA1 AIDK08S65C5ATMA1 is Silicon ...
2025-07-31 00:22:50
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... IDWD10G120C5XKSA1 Diode 1200V 34A Through Hole Product Description Of IDWD10G120C5XKSA1 IDWD10G120C5XKSA1 CoolSiC™ Schottky diodes generation 5 ...
2025-07-31 00:22:50
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... FFSH5065B-F085 Technology SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max) 650 V Current - Average Rectified (Io)
2025-07-30 00:16:18
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... (trr) 0 ns Current - Reverse Leakage @ Vr 200 µA @ 1200 V Capacitance @ Vr, F 1130pF @ 1V, 1MHz Mounting Type Through Hole Package / Case TO-247-2...
2025-07-31 00:22:44
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IKW40N65WR5 Reverse-Conducting IGBT With Monolithic Body Diode TO-247-3 Package Product Description Of IKW40N65WR5 IKW40N65WR5 is a IGBT Trench 650 V ...
2024-12-09 21:35:22
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Integrated Circuit Chip IPW65R099CFD7A Through Hole TO-247-3 Transistors Product Description Of IPW65R099CFD7A IPW65R099CFD7A provides for an ...
2025-07-30 00:16:17
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... with full rated current diode. Product Attributes Of FGHL40T65MQDT Part Number FGHL40T65MQDT Power - Max 238 W Switching Energy 880µJ (on), 490µJ ...
2025-07-30 00:16:17
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