China Integrated Circuit Chip manufacturer
ShenZhen Mingjiada Electronics Co.,Ltd.
Shenzhen Mingjiada Electronics Co., Ltd.
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silicon carbide modules 1200v

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ShenZhen Mingjiada Electronics Co.,Ltd.

City: shenzhen

Country/Region:china

Tel:86-0755-83294757

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Mr.Sales Manager
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silicon carbide modules 1200v

Selling leads
... performance compared to a silicon-based solution increasing system reliability and the possibility to increase output power in a given form factor... 2025-07-16 00:20:29
... Dual Silicon Carbide Schottky Barrier Diodes 1200V​ Product Description Of MSC2X50SDA120J MSC2X50SDA120J is Silicon Carbide (SiC) power Schottky ... 2025-07-14 00:20:06
...manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V ... 2025-07-16 00:20:11
1200V Diode MSC050SDA120B Zero Recovery Silicon Carbide Schottky Diode TO-247-3​ Product Description Of MSC050SDA120B MSC050SDA120B is Zero Recovery ... 2025-07-14 00:19:57
... to combine performance with reliability. Specification Of IMW120R140M1H Part Number IMW120R140M1H Product Status Active FET Type N-Channel ... 2025-07-16 00:20:35
... Modules 1200V 150A Half-Bridge IGBT Power Module Product Description Of BSM150GB120DN2 BSM150GB120DN2 is 1200V, 210A Half Bridge IGBT Module, ... 2025-01-10 07:30:17
...Emitter Controlled 4 diode. Specification Of FZ900R12KE4 Part Number: FZ900R12KE4 Product: IGBT Silicon Modules Configuration: Single Collector- ... 2025-07-04 07:30:28
... with TRENCHSTOP™ IGBT3 and Emitter Controlled HE diode. Specification Of FS450R12KE3 Part Number: FS450R12KE3 Product: IGBT Silicon Modules ... 2025-07-05 00:22:05
Automotive IGBT Modules FF75R12RT4 Dual IGBT Silicon Modules 1200V 75A Chassis Mount [MJD Advantage] + 15 years experience for electronic components + ... 2024-12-09 23:38:20
Automotive IGBT Modules NVVR26A120M1WSB 1200V Half Bridge Silicon Carbine Module [MJD Advantage] + 15 years experience for electronic components + ... 2024-12-09 23:42:12
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