China Integrated Circuit Chip manufacturer
ShenZhen Mingjiada Electronics Co.,Ltd.
Shenzhen Mingjiada Electronics Co., Ltd.
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sic mosfet power module

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ShenZhen Mingjiada Electronics Co.,Ltd.

City: shenzhen

Country/Region:china

Tel:86-0755-83294757

Contact Person:
Mr.Sales Manager
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921 - 930 of 1831

sic mosfet power module

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Automotive IGBT Modules FF33MR12W1M1HB11BPSA1 1200V CoolSiC™ Trench MOSFET Transistors [MJD Advantage] + 15 years experience for electronic components ... 2024-12-09 23:40:05
Automotive IGBT Modules WAS530M12BM3 Mosfet Array 1200V 630A Half-Bridge Transistors [MJD Advantage] + 15 years experience for electronic components + ... 2025-02-25 00:27:29
Automotive IGBT Modules APT50M75B2FLLG 500V 57A N Channel MOSFET Transistors [MJD Advantage] + 15 years experience for electronic components + Secure ... 2025-08-04 00:15:37
Automotive IGBT Modules NXH040P120MNF1PTG Mosfet Array 1200V Silicon Carbide Transistors [MJD Advantage] + 15 years experience for electronic ... 2025-02-10 14:23:18
... is 8-LFPAK, Surface Mount. Specification Of NTMJS1D4N06CLTWG Part Number NTMJS1D4N06CLTWG Technology MOSFET (Metal Oxide) Drive Voltage (Max Rds ... 2025-08-04 00:15:25
...Power MOSFET 5-DFN IC Chips​ Product Description Of NTMFS005N10MCLT1G NTMFS005N10MCLT1G is 100V, 5.1mOhm, 105A MOSFET – Power, Single N-Channel ... 2025-08-04 00:15:29
...-F085T6 Qg - Gate Charge: 108 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 159.6 W ... 2025-08-04 00:15:29
... DF419MR20W3M1HFB11BPSA1 VDSS 2000 V IDRM 120 A On-state gate voltage 18V Off-state gate voltage -3V Package / Case Module Features Of DF419MR20W3M... 2025-08-04 00:14:41
...Modules FF450R08A03P2 Power Driver Module IGBT Half Bridge 750V 450A Module Description of FF450R08A03P2 The FF450R08A03P2 is a very compact half... 2025-08-04 00:14:41
.... ​Specification Of F411MR12W2M1B76BOMA1 Part Number F411MR12W2M1B76BOMA1 Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount ... 2025-08-04 00:14:41
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