611 - 620 of 1810
sic mosfet power module
Selling leads
...Channel (Dual) MOSFET Arrays. Specification Of DF11MR12W1M1PB11BPSA1 Part Number DF11MR12W1M1PB11BPSA1 Technology Silicon Carbide (SiC) Current - ...
2025-07-29 00:15:28
|
... MOSFET Transistors, package is TO-263-8. Specification Of SCT4018KEC11 Part Number: SCT4018KEC11 Fall Time: 14 ns Forward Transconductance - Min: ...
2025-07-29 00:15:45
|
...SiC Trench MOSFET TO247 package Description The CoolSiC™ 1200 V, 14 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconduct...
2025-06-22 00:16:27
|
... trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like ...
2025-07-29 00:16:11
|
...MOSFET Module 1200V Automotive IGBT Modules Product Description Of FF8MR12W2M1B11BOMA1 FF8MR12W2M1B11BOMA1 is 1200 V, 8 mΩ half-bridge module with ...
2025-07-29 00:15:28
|
...™ MOSFET, NTC, and PressFIT Contact Technology. Specification Of F415MR12W2M1B76BOMA1 Part Number F415MR12W2M1B76BOMA1 Technology Silicon Carbide ...
2025-07-29 00:15:28
|
... (D3PAK) package. Specification Of MSC360SMA120S Part Number: MSC360SMA120S Technology: SiC Package / Case: TO-268 Transistor Polarity: N-Channel ...
2025-07-29 00:16:17
|
... Grade N-channel SiC Power MOSFET Product Description Of SCT4045DRHRC15 SCT4045DRHRC15 is Automotive Grade N-channel SiC power MOSFET Transistors. ...
2025-07-29 00:16:16
|
... (Tc), Through Hole Module. Specification Of MSCSM70TLM10C3AG Part Number MSCSM70TLM10C3AG Technology Silicon Carbide (SiC) Configuration 4 N...
2024-12-09 22:12:14
|
... Mount, 2 N-Channel Transistors Module. Specification Of DF8MR12W1M1HFB67BPSA1 Part Number DF8MR12W1M1HFB67BPSA1 Technology Silicon Carbide (SiC) ...
2025-07-29 00:15:28
|