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quick charge chip
Selling leads
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... for a high efficiency operation in various applications, rugged transient reliability and low EMI. Specification Of AFGY120T65SPD Part Number ...
2026-04-16 00:36:32
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.... Specification Of AFGB40T65RQDN Part Number: AFGB40T65RQDN Gate Emitter Voltage: - 20 V, + 20 V Gate Charge: 56 NC Td (On/Off) @ 25°C: 14.5ns ...
2026-04-16 00:36:32
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...Chips AFGHL50T65RQDN IGBT Trench Field Stop Transistors 268W TO-247-3 Product Description Of AFGHL50T65RQDN AFGHL50T65RQDN is Stand Alone IGBT, 50A...
2026-04-16 00:36:32
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...Chips AFGHL40T65SPD IGBT Trench Field Stop Transistors TO-247-3 Product Description Of AFGHL40T65SPD AFGHL40T65SPD IGBT Trench Field Stop ...
2026-04-16 00:36:32
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...Chip IPW50R199CPFKSA1 N-Channel 550 V 17A Single Transistors Product Description Of IPW50R199CPFKSA1 IPW50R199CPFKSA1 is N-Channel 550 V 17A (Tc) ...
2026-04-20 00:29:26
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...Chips FFSD1065B-F085 TO-252 Silicon Carbide Schottky Diodes Product Description Of FFSD1065B-F085 FFSD1065B-F085 is Silicon Carbide Schottky ...
2026-04-20 00:29:25
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...Chip Product Description Of IPP65R190CFD7A IPP65R190CFD7A is 650V CoolMOS CFD7A SJ Power Device, the package is TO-220-3, Through Hole. Specificat...
2026-04-16 00:36:26
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... Rds On (Max) @ Id, Vgs 99mOhm @ 12.5A, 10V Vgs(th) (Max) @ Id 4.5V @ 630µA Gate Charge (Qg) (Max) @ Vgs 53 nC @ 10 V
2026-04-16 00:36:26
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... Oxide) Rds On (Max) @ Id, Vgs 190mOhm @ 6.4A, 10V Vgs(th) (Max) @ Id 4.5V @ 320µA Gate Charge (Qg) (Max) @ Vgs 7 nC @
2026-04-20 00:29:26
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...Chip IAUT260N10S5N019 N-Channel 100V 260A 300W Surface Mount Transistors Product Description Of IAUT260N10S5N019 IAUT260N10S5N019 is N-Channel 100 ...
2026-04-16 00:36:25
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