171 - 180 of 345
n trench mosfet transistors
Selling leads
... is TO-263-8, D²Pak (7 Leads + Tab), TO-263C. Specification Of IPBE65R190CFD7A Part Number IPBE65R190CFD7A Technology MOSFET (Metal Oxide) Rds On ...
2025-08-04 00:15:13
|
... Footprint (5x6 mm) for Compact Design, package is LFPAK4. Specification Of NVMYS2D1N04CLTWG Part Number NVMYS2D1N04CLTWG FET Type N-Channel ...
2025-08-04 00:15:25
|
... with anti-parallel diode in TO-247 package with EC7 diode inside. Specification Of IKW40N120CS7XKSA1 Part Number: IKW40N120CS7XKSA1 Product ...
2025-08-04 00:15:31
|
Transistors IKY140N120CH7XKSA1 IGBT Trench Field Stop TO-247-4 Hard Switching 1200V Product Description Of IKY140N120CH7XKSA1 IKY140N120CH7XKSA1 is ...
2025-08-04 00:15:11
|
...Transistors NTMFS005N10MCLT1G Power MOSFET 5-DFN IC Chips Product Description Of NTMFS005N10MCLT1G NTMFS005N10MCLT1G is 100V, 5.1mOhm, 105A MOSFET ...
2025-08-04 00:15:29
|
..., Through Hole, package is TO-247-4. Specification Of IMYH200R012M1H Part Number IMYH200R012M1H FET Type N-Channel Technology SiC (Silicon Carbide ...
2025-08-04 00:15:24
|
...Transistors MSC750SMA170B4 N-Channel Transistors TO-247-4 Silicon Carbide Product Description Of MSC750SMA170B4 MSC750SMA170B4 is N-Channel Single ...
2025-08-04 00:15:31
|
...silicon carbide with features amplifying device performance, reliability, and ease of use. With its state-of-the-art trench semiconductor process, ...
2025-08-04 00:15:32
|
...produced using an advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state ...
2025-08-04 00:15:29
|
120A Automobile Chips AFGY120T65SPD Single IGBTs Transistors 650V IGBT Trench Field Stop Product Description Of AFGY120T65SPD AFGY120T65SPD which is ...
2025-08-04 00:15:29
|