281 - 290 of 374
multi channel power amplifier chip
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...Chips ADS131B04QPWRQ1 24 Bit Analog to Digital Converter 20-TSSOP Package Product Description Of ADS131B04QPWRQ1 The ADS131B04QPWRQ1 is a four...
2025-07-23 00:18:40
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... Chip Product Description Of STM32F302RET6 STM32F302RET6 Up to 24 capacitive sensing channels supporting touchkey, linear and rotary touch sensors...
2025-07-23 00:18:57
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...33 Transistors. Specification Of IAUC40N08S5L140 Part Number: IAUC40N08S5L140 Technology: MOSFET (Metal Oxide) Power Dissipation (Max): 300W (Tc) ...
2025-07-23 00:18:41
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Chip Integrated Circuit XC7A100T-3FTG256E Artix-7 Field Programmable Gate Array IC Product Description Of XC7A100T-3FTG256E XC7A100T-3FTG256E is an ...
2024-12-09 22:08:10
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... a 10 MHz clock rate. Power dissipation is 110 mW (typical) with ±5 V supplies and 135 mW (typical) when ±12 V supplies are used. Specification Of ...
2025-07-23 00:18:39
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... power domains while using as little as 0.65mW per channel at 2Mbps with 1.8V.MAX12931CASA+ devices are available with a maximum data rate of ...
2025-07-14 00:20:07
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..., industrial networking systems, and building automation. Specification Of MAX22517AWA+ Part Number MAX22517AWA+ Technology Capacitive Coupling ...
2025-07-14 00:20:06
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Silicon Carbide Transistors IMBG65R039M1HXTMA1 Integrated Circuit Chip TO-263-8 Product Description Of IMBG65R039M1HXTMA1 IMBG65R039M1HXTMA1 is N...
2025-07-14 00:20:06
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...Chip NVH4L060N090SC1 Silicon Carbide MOSFETs Transistors TO-247-4 Product Description Of NVH4L060N090SC1 NVH4L060N090SC1 is 60mohm, 900V Silicon ...
2025-07-14 00:20:06
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...Chip Product Description Of SCTW70N120G2V SCTW70N120G2V's variation of switching loss is almost independent of junction temperature. Specification ...
2025-07-14 00:20:06
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