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mosfet silicon carbide modules
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FS28MR12W1M1HB11 Automotive IGBT Modules 1200V 28mΩ CoolSiC™ MOSFET Six-Cell Module [MJD Advantage] + 15 years experience for electronic components + ...
2024-12-10 00:33:22
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FF2000UXTR33T2M1 Automotive IGBT Modules 3.3 KV CoolSiC™ MOSFET Half Bridge Module [MJD Advantage] + 15 years experience for electronic components + ...
2024-12-10 00:40:35
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FF4000UXTR33T2M1 Automotive IGBT Modules 3.3kV CoolSiC MOSFET Half-Bridge Modules [MJD Advantage] + 15 years experience for electronic components + ...
2025-05-11 04:34:21
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F3L6MR20W2M1HB70 Automotive IGBT Modules CoolSiC™ MOSFET Half-Bridge Module [MJD Advantage] + 15 years experience for electronic components + Secure ...
2024-12-10 00:44:43
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FF6MR20W2M1HB70 Automotive IGBT Modules 1200V CoolSiC™ MOSFET Half-Bridge Module [MJD Advantage] + 15 years experience for electronic components + ...
2024-12-10 00:44:43
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FF8MR12W1M1HC58 Automotive IGBT Modules 1200V CoolSiC MOSFET Half-Bridge Modules [MJD Advantage] + 15 years experience for electronic components + ...
2025-05-11 04:34:19
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FF3MR12KM1HP Automotive IGBT Modules 1200V CoolSiC™ MOSFET Half Bridge Module [MJD Advantage] + 15 years experience for electronic components + Secure ...
2025-06-27 17:04:00
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... Dual Silicon Carbide Schottky Barrier Diodes 1200V Product Description Of MSC2X50SDA120J MSC2X50SDA120J is Silicon Carbide (SiC) power Schottky ...
2025-07-14 00:20:06
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...manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V ...
2025-07-17 00:21:40
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... performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low ...
2025-07-17 00:21:40
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