China Integrated Circuit Chip manufacturer
ShenZhen Mingjiada Electronics Co.,Ltd.
Shenzhen Mingjiada Electronics Co., Ltd.
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mosfet 1200v half bridge module

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ShenZhen Mingjiada Electronics Co.,Ltd.

City: shenzhen

Country/Region:china

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mosfet 1200v half bridge module

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...Silicon Carbide Modules​, Chassis Mount. ​Specification Of FS45MR12W1M1B11BOMA1 Part Number: FS45MR12W1M1B11BOMA1 VDSS: 1200V ID Nom: 25A IDRM: 50A ... 2025-08-02 00:15:39
... is 1200V 75A 188W IGBT Module Trench Field Stop Half Bridge. Specification Of NXH80T120L3Q0S3G Part Number NXH80T120L3Q0S3G Input Capacitance ... 2025-08-02 00:15:39
Automotive IGBT Modules​ NXH020F120MNF1 Full Bridge SiC MOSFET Module 1200V [MJD Advantage] + 15 years experience for electronic components + Secure ... 2025-08-01 00:16:53
Automotive IGBT Modules CCB021M12FM3T 1200V 3 Phase Bridge Power MOSFET Module [MJD Advantage] + 15 years experience for electronic components + ... 2024-12-09 23:42:00
Automotive IGBT Modules GCMX040A120B3H1P 1200V 40mohm SiC Full-Bridge MOSFET Modules [MJD Advantage] + 15 years experience for electronic components + ... 2025-08-01 00:16:53
Automotive IGBT Modules NXH030F120M3F1PTG Full−Bridge 1200V Silicon Carbide MOSFET Module [MJD Advantage] + 15 years experience for electronic ... 2025-02-19 15:34:13
APTM120H140FT1G Automotive IGBT Modules 1200V 1400 mOhm Full Bridge Si MOSFET Module SP1F Package [MJD Advantage] + 15 years experience for electronic ... 2025-07-04 07:30:28
Automotive IGBT Modules FF45MR12W1M1B11BOMA1 Dual 1200V CoolSiC MOSFET Module​ Product Description Of FF45MR12W1M1B11BOMA1 FF45MR12W1M1B11BOMA1 is ... 2025-08-02 00:15:39
... MOSFET Module. ​Specification Of F423MR12W1M1PB11BPSA1 Part Number F423MR12W1M1PB11BPSA1 Vgs(th) (Max) @ Id 5.5V @ 20mA Gate Charge (Qg) (Max) @ ... 2025-08-02 00:15:39
... Of FS03MR12A6MA1LB Part Number: FS03MR12A6MA1B Series: HybridPACK™ Technology: Silicon Carbide (SiC) Configuration: 6 N-Channel (3-Phase Bridge) ... 2025-08-02 00:15:39
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