China Integrated Circuit Chip manufacturer
ShenZhen Mingjiada Electronics Co.,Ltd.
Shenzhen Mingjiada Electronics Co., Ltd.
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medium power h bridge igbt module

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ShenZhen Mingjiada Electronics Co.,Ltd.

City: shenzhen

Country/Region:china

Tel:86-0755-83294757

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medium power h bridge igbt module

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...IGBT Module Trench Field Stop Half Bridge Inverter Product Description Of FF450R12ME4 FF450R12ME4 is 1200 V, 450 A dual IGBT Module with TRENCHSTOP... 2024-12-09 22:17:44
IGBT Modules FS03MR12A6MA1BBPSA1 Mosfet Array 6N Channel 3 Phase Bridge Detailed Description Of FS03MR12A6MA1BBPSA1 FS03MR12A6MA1BBPSA1 is a very ... 2025-07-27 00:17:52
...high short-circuit capability, high current density, low switching losses, and unbeatable robustness. The FF1200R17IP5PBPSA1 modules are ideal for ... 2025-07-27 00:17:52
...Medium Power IGBT Modules Transistors Product Description Of FS300R17OE4B81BPSA1 FS300R17OE4B81BPSA1 feature TRENCHSTOP™ IGBT7, Emitter Controlled ... 2025-07-27 00:17:52
Medium Power Econo FF900R12ME7WB11BPSA1 1200V 900A dual three-phase PIM IGBT modules Detailed Description FF900R12ME7WB11BPSA1 is 1200 V, 900 A dual ... 2025-07-26 00:16:30
...IGBT Modules MSCSM120HM31CTBL2NG N-Channel Mosfet Array Transistors Product Description Of MSCSM120HM31CTBL2NG MSCSM120HM31CTBL2NG device is a full ... 2024-12-09 22:24:04
... and electric vehicles.The power module implements the new CoolSiC™ Automotive MOSFET 1200V, optimized for electric drive train applications. ... 2025-07-27 00:17:52
...Module FF23MR12W1M1B11BOMA1 Automotive IGBT Modules 50A 20mW​ Product Description Of FF23MR12W1M1B11BOMA1 FF23MR12W1M1B11BOMA1 Dual 1200V/23mΩ half ... 2025-07-27 00:17:52
... is TMPIM 50 A CIB/CI Module, Three Phase Inverter with Brake. Low Thermal Resistance Substrate for Low Thermal Resistance. Specification Of ... 2024-12-09 22:24:04
4N-Channel Mosfet Array MSCSM170HM23CT3AG Full Bridge SiC MOSFET Power Module 602W ​ Product Description Of MSCSM170HM23CT3AG MSCSM170HM23CT3AG is ... 2024-12-09 22:12:14
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